ArticleACS applied materials & interfaces2020
Transient Evolution of the Built-in Field at Junctions of GaAs.
Article in ACS applied materials & interfaces, 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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Who cites it
3 citing papers in PubMed.
- A Femtosecond Electron-Based Versatile Microscopy for Visualizing Carrier Dynamics in Semiconductors Across Spatiotemporal and Energetic Domains.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024Article
- Photocatalytic and Electrocatalytic Generation of Hydrogen Peroxide: Principles, Catalyst Design and Performance.Nano-micro letters · 2023Review
- DirectJournal of the American Chemical Society · 2023Article
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Authors and funding
8 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Built-in electric fields at semiconductor junctions are vital for optoelectronic and photocatalytic applications since they govern the movement of photogenerated charge carriers near critical surfaces and interfaces. Here, we exploit transient photoreflectance (TPR) spectroscopy to probe the dynamical evolution of the built-in field for n-GaAs photoelectrodes upon photoexcitation. The transient fields are modeled in order to quantitatively describe the surface carrier dynamics that influence those fields. The photoinduced surface field at different types of junctions between n-GaAs and n-TiO
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