ArticleMicromachines2020
Effects of Anisotropy on Single Crystal Silicon in Polishing Non-Continuous Surface.
Article in Micromachines, 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
1 citing paper in PubMed, 6 citations in OpenAlex.
- General Molecular Dynamics Approach to Understand the Mechanical Anisotropy of Monocrystalline Silicon under the Nanoscale Effects of Point Defect.Nanomaterials (Basel, Switzerland) · 2021Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
5 authors at 1 institution in 1 country.
Funding
Abstract
A molecular dynamics model of the diamond abrasive polishing the single crystal silicon is established. Crystal surfaces of the single crystal silicon in the Y-direction are (010), (011), and (111) surfaces, respectively. The effects of crystallographic orientations on polishing the non-continuous single crystal silicon surfaces are discussed from the aspects of surface morphology, displacement, polishing force, and phase transformation. The simulation results show that the Si(010) surface accumulates chips more easily than Si(011) and Si(111) surfaces. Si(010) and Si(011) workpieces are deformed in the entire pore walls on the entry areas of pores, while the Si(111) workpiece is a local large deformation on entry areas of the pores. Comparing the recovery value of the displacement in different workpieces, it can be seen that the elastic deformation of the A side in the Si(011) workpiece is larger than that of the A side in other workpieces. Pores cause the tangential force and normal force to fluctuate. The fluctuation range of the tangential force is small, and the fluctuation range of the normal force is large. Crystallographic orientations mainly affect the position where the tangential force reaches the maximum and minimum values and the magnitude of the decrease in the tangential force near the pores. The position of the normal force reaching the maximum and minimum values near the pores is basically the same, and different crystallographic orientations have no obvious effect on the drop of the normal force, except for a slight fluctuation in the value. The high-pressure phase transformation is the main way to change the crystal structure. The Si(111) surface is the cleavage surface of single crystal silicon, and the total number of main phase transformation atoms on the Si(111) surface is the largest among the three types of workpieces. In addition, the phase transformation in Si(010) and Si(011) workpieces extends to the bottom of pores, and the Si(111) workpiece does not extend to the bottom of pores.
Indexed as
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.