ArticleNanomaterials (Basel, Switzerland)2020
Devices with Tuneable Resistance Switching Characteristics Based on a Multilayer Structure of Graphene Oxide and Egg Albumen.
Article in Nanomaterials (Basel, Switzerland), 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
4 citing papers in PubMed, 13 citations in OpenAlex.
- Identification and Characterization of Glycine- and Proline-Rich Antioxidant Peptides From Antler Residues Based on Peptidomics, Machine Learning, and Molecular Docking.Food science & nutrition · 2025Article
- Tunable Multilevel Data Storage Bioresistive Random Access Memory Device Based on Egg Albumen and Carbon Nanotubes.Nanomaterials (Basel, Switzerland) · 2021Article
- Dual-Tunable Memristor Based on Carbon Nanotubes and Graphene Quantum Dots.Nanomaterials (Basel, Switzerland) · 2021Article
- Flexible Nonvolatile Bioresistive Random Access Memory with an Adjustable Memory Mode Capable of Realizing Logic Functions.Nanomaterials (Basel, Switzerland) · 2021Article
Corrections and comments
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Authors and funding
3 authors at 1 institution in 1 country.
Funding
Abstract
We used graphene oxide (GO) and egg albumen (EA) to fabricate bipolar resistance switching devices with indium tin oxide (ITO)/GO/EA/GO/Aluminum (Al) and ITO/EA/Al structures. The experimental results show that these ITO/GO/EA/GO/Al and ITO/EA/Al bio-memristors exhibit rewritable flash memory characteristics. Comparisons of ITO/GO/EA/GO/Al devices with 0.05 ωt %, 0.5 ωt %, and 2 ωt % GO in the GO layers and the ITO/EA/Al device show that the ON/OFF current ratio of these devices increases as the GO concentration decreases. Among these devices, the highest switching current ratio is 1.87 × 10
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Registered trials
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