Evidence map›Paper›PMID 32751364›Full record

ArticleNanomaterials (Basel, Switzerland)2020

Devices with Tuneable Resistance Switching Characteristics Based on a Multilayer Structure of Graphene Oxide and Egg Albumen.

Lu Wang, Jinyi Wang, Dianzhong Wen

Open access · goldAbstract read
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.

0numbers the graph read from it
0cells of the map it votes in
4citing papers in PubMed
0.9field-weighted citation impact, top 25% of its field
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

4 citing papers in PubMed, 13 citations in OpenAlex.

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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

3 authors at 1 institution in 1 country.

Lu WangHLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China.
Jinyi WangHLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China.
Dianzhong WenHLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China.
Heilongjiang University · CN

Funding

the Basic Research Business Funding for Provincial Universities in Heilongjiang Province KJCX201808the National natural science foundation of China 61801174
6 · The paper itself

Abstract

We used graphene oxide (GO) and egg albumen (EA) to fabricate bipolar resistance switching devices with indium tin oxide (ITO)/GO/EA/GO/Aluminum (Al) and ITO/EA/Al structures. The experimental results show that these ITO/GO/EA/GO/Al and ITO/EA/Al bio-memristors exhibit rewritable flash memory characteristics. Comparisons of ITO/GO/EA/GO/Al devices with 0.05 ωt %, 0.5 ωt %, and 2 ωt % GO in the GO layers and the ITO/EA/Al device show that the ON/OFF current ratio of these devices increases as the GO concentration decreases. Among these devices, the highest switching current ratio is 1.87 × 10

Indexed as

conductive filamentegg albumengraphene oxidememory devicenonvolatile memory

Identifiers

PMID32751364
PMCPMC7466537
OpenAlexW3045554551

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.