ArticleScientific reports2020
Direct growth of graphene on Ge(100) and Ge(110) via thermal and plasma enhanced CVD.
Article in Scientific reports, 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.
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Who cites it
6 citing papers in PubMed, 14 citations in OpenAlex.
- Controlling the structural, optical, electrical, and compositional properties of silica-graphite core-shell for supercapacitor applications.Scientific reports · 2026Article
- CVD-Engineered Nano Carbon Architectures: Mechanisms, Challenges, and Outlook.Nanomaterials (Basel, Switzerland) · 2025Review
- DFT-Assisted Approach to Low-Temperature Graphene Growth on Sapphire.Small (Weinheim an der Bergstrasse, Germany) · 2025Article
- Chemical Vapor Deposition Growth of Graphene on 200 mm Ge(110)/Si Wafers and Ab Initio Analysis of Differences in Growth Mechanisms on Ge(110) and Ge(001).ACS applied materials & interfaces · 2023Article
- Freestanding Graphene Fabric Film for Flexible Infrared Camouflage.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2022Article
- A Simplified Method for Patterning Graphene on Dielectric Layers.ACS applied materials & interfaces · 2021Article
Corrections and comments
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Authors and funding
5 authors at 1 institution in 1 country.
Funding
No grant is acknowledged in the PubMed record.
Abstract
The integration of graphene into CMOS compatible Ge technology is in particular attractive for optoelectronic devices in the infrared spectral range. Since graphene transfer from metal substrates has detrimental effects on the electrical properties of the graphene film and moreover, leads to severe contamination issues, direct growth of graphene on Ge is highly desirable. In this work, we present recipes for a direct growth of graphene on Ge via thermal chemical vapor deposition (TCVD) and plasma-enhanced chemical vapor deposition (PECVD). We demonstrate that the growth temperature can be reduced by about 200 °C in PECVD with respect to TCVD, where usually growth occurs close to the melting point of Ge. For both, TCVD and PECVD, hexagonal and elongated morphology is observed on Ge(100) and Ge(110), respectively, indicating the dominant role of substrate orientation on the shape of graphene grains. Interestingly, Raman data indicate a compressive strain of ca. - 0.4% of the graphene film fabricated by TCVD, whereas a tensile strain of up to + 1.2% is determined for graphene synthesized via PECVD, regardless the substrate orientation. Supported by Kelvin probe force measurements, we suggest a mechanism that is responsible for graphene formation on Ge and the resulting strain in TCVD and PECVD.
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Registered trials
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