ArticleNanomaterials (Basel, Switzerland)2020
Graphene Oxide: Graphene Quantum Dot Nanocomposite for Better Memristic Switching Behaviors.
Article in Nanomaterials (Basel, Switzerland), 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
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Who cites it
5 citing papers in PubMed.
- Improving the Corrosion Resistance of Steel Alloys Using Polyaniline/Graphene Nanocomposite Coatings.ACS omega · 2026Article
- Advances and Perspectives in Graphene-Based Quantum Dots Enabled Neuromorphic Devices.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Review
- Quantum dot-based non-volatile memory: a comprehensive outlook.RSC advances · 2025Review
- High sensitivity and wide response range artificial synapse based on polyimide with embedded graphene quantum dots.Scientific reports · 2023Article
- Synaptic Characteristics from Homogeneous Resistive Switching in Pt/AlNanomaterials (Basel, Switzerland) · 2020Article
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Authors and funding
1 author.
Funding
Abstract
Tristable memristic switching provides the capability for multi-bit data storage. In this study, all-inorganic multi-bit memory devices were successfully manufactured by the attachment of graphene quantum dots (GQDs) onto graphene oxide (GO) through a solution-processable method. By means of doping GQDs as charge-trapping centers, the device indium-tin oxide (ITO)/GO:0.5 wt%GQDs/Ni revealed controllable memristic switching behaviors that were tunable from binary to ternary, and remarkably enhanced in contrast with ITO/GO/Ni. It was found that the device has an excellent performance in memristic switching parameters, with a SET1, SET2 and RESET voltage of -0.9 V, -1.7 V and 5.15 V, as well as a high ON2/ON1/OFF current ratio (10
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Registered trials
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