ReviewNanomaterials (Basel, Switzerland)2020
Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application.
Review in Nanomaterials (Basel, Switzerland), 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 49 papers.
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Who cites it
49 citing papers in PubMed.
- In Situ Transmission Electron Microscopy Observation of Redox-Structure-Coupled Resistive Switching in High-Entropy Oxide Memristors.ACS nano · 2026Article
- Grain-Size-Controlled Resistive Switching Memories Enabling Domain-Specific Functionality for Real-Time Video Signal Processing.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- CMOS-Compatible Fabrication Module for Sub-100 nm TiN and TaN Pillar Electrodes for Carbon Nanotube Test Structures.Nanomaterials (Basel, Switzerland) · 2026Article
- Brain-Inspired In-Memory Data Pruning and Computing with TaOAdvanced materials (Deerfield Beach, Fla.) · 2025Article
- Reconfigurable artificial neuron and synapse enabled through a single alloyed memristor.Scientific reports · 2025Article
- Physically Transient Gelatin-Based Memristors of Buildable Logic Gates.Gels (Basel, Switzerland) · 2025Article
- Wordline Input Bias Scheme for Neural Network Implementation in 3D-NAND Flash.Biomimetics (Basel, Switzerland) · 2025Article
- Scindapsus Aureus Resistive Random-Access Memory with Synaptic Plasticity and Sound Localization Function.Nanomaterials (Basel, Switzerland) · 2025Article
- A keyword-based approach to analyzing scientific research trends: ReRAM present and future.Scientific reports · 2025Article
- Advances in Metal Halide Perovskite Memristors: A Review from a Co-Design Perspective.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Review
- Cryo-SIMPLY: A Reliable STT-MRAM-Based Smart Material Implication Architecture for In-Memory Computing.Nanomaterials (Basel, Switzerland) · 2024Article
- Density Functional Theory Insights into Conduction Mechanisms in Perovskite-Type RCoOMolecules (Basel, Switzerland) · 2024Article
- Quantum Dots for Resistive Switching Memory and Artificial Synapse.Nanomaterials (Basel, Switzerland) · 2024Review
- Research on Residual Gas Adsorption on Surface of Hexagonal Boron Nitride-Based Memristor.ACS omega · 2024Article
- Optimization of Bilayer Resistive Random Access Memory Based on Ti/HfOMaterials (Basel, Switzerland) · 2024Article
- High-density via RRAM cell with multi-level setting by current compliance circuits.Discover nano · 2024Article
- Improved Resistive Switching Characteristics and Synaptic Functions of InZnO/SiOMaterials (Basel, Switzerland) · 2023Article
- Article
- Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computing.Materials (Basel, Switzerland) · 2023Article
- Effect of electrode materials on resistive switching behaviour of NbOScientific reports · 2023Article
Corrections and comments
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Authors and funding
8 authors.
Funding
Abstract
Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generation alternatives to traditional memory. In this review, an overview of RRAM devices is demonstrated in terms of thin film materials investigation on electrode and function layer, switching mechanisms and artificial intelligence applications. Compared with the well-developed application of inorganic thin film materials (oxides, solid electrolyte and two-dimensional (2D) materials) in RRAM devices, organic thin film materials (biological and polymer materials) application is considered to be the candidate with significant potential. The performance of RRAM devices is closely related to the investigation of switching mechanisms in this review, including thermal-chemical mechanism (TCM), valance change mechanism (VCM) and electrochemical metallization (ECM). Finally, the bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short-term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity (STDP) reveal the great potential of RRAM devices in the field of neuromorphic application.
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Registered trials
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