ArticleNature communications2020
Gate-tunable spin-galvanic effect in graphene-topological insulator van der Waals heterostructures at room temperature.
Article in Nature communications, 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 14 papers.
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Who cites it
14 citing papers in PubMed.
- Non-volatile Fermi level tuning for the control of spin-charge conversion at room temperature.Nature communications · 2024Article
- Signature of pressure-induced topological phase transition in ZrTenpj quantum materials · 2024Article
- Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions.Nature communications · 2023Article
- Berry curvature-induced local spin polarisation in gated graphene/WTeNature communications · 2022Article
- Challenges and opportunities in 2D heterostructures for electronic and optoelectronic devices.iScience · 2022Review
- Magnetotransport Studies of Encapsulated Topological Insulator BiNanomaterials (Basel, Switzerland) · 2022Article
- 2D BiiScience · 2021Review
- Spin-Orbit Torque in Van der Waals-Layered Materials and Heterostructures.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2021Review
- Van der Waals heterostructures for spintronics and opto-spintronics.Nature nanotechnology · 2021Review
- Huge magnetoresistance in topological insulator spin-valves at room temperature.Scientific reports · 2021Article
- Synthesis of Large-Scale Monolayer 1T'-MoTeACS nano · 2021Article
- Rashba Effect and Raman Spectra of TlACS omega · 2021Article
- Robust Spin Interconnect with Isotropic Spin Dynamics in Chemical Vapor Deposited Graphene Layers and Boundaries.ACS nano · 2020Article
- Electrically Controlled Spin Injection from Giant Rashba Spin-Orbit Conductor BiTeBr.Nano letters · 2020Article
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Authors and funding
4 authors.
Funding
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Abstract
Unique electronic spin textures in topological states of matter are promising for emerging spin-orbit driven memory and logic technologies. However, there are several challenges related to the enhancement of their performance, electrical gate-tunability, interference from trivial bulk states, and heterostructure interfaces. We address these challenges by integrating two-dimensional graphene with a three-dimensional topological insulator (TI) in van der Waals heterostructures to take advantage of their remarkable spintronic properties and engineer proximity-induced spin-charge conversion phenomena. In these heterostructures, we experimentally demonstrate a gate-tunable spin-galvanic effect (SGE) at room temperature, allowing for efficient conversion of a non-equilibrium spin polarization into a transverse charge current. Systematic measurements of SGE in various device geometries via a spin switch, spin precession, and magnetization rotation experiments establish the robustness of spin-charge conversion in the Gr-TI heterostructures. Importantly, using a gate voltage, we reveal a strong electric field tunability of both amplitude and sign of the spin-galvanic signal. These findings provide an efficient route for realizing all-electrical and gate-tunable spin-orbit technology using TIs and graphene in heterostructures, which can enhance the performance and reduce power dissipation in spintronic circuits.
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