Evidence map›Paper›PMID 32620980›Full record

ArticleJournal of molecular modeling2020

Effect of substitutional and vacancy defects on the electrical and mechanical properties of 2D-hexagonal boron nitride.

T Chaitanya Sagar, Viswanath Chinthapenta

Abstract read
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In one paragraph

Article in Journal of molecular modeling, 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
0.6field-weighted citation impact, top 37% of its field
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed, 22 citations in OpenAlex.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

2 authors at 1 institution in 1 country.

T Chaitanya SagarMicro-Mechanics Lab, Department of Mechanical and Aerospace Engineering, IIT Hyderabad, Kandi, Sangareddy, 502285, India.
Viswanath ChinthapentaMicro-Mechanics Lab, Department of Mechanical and Aerospace Engineering, IIT Hyderabad, Kandi, Sangareddy, 502285, India. viswanath@mae.iith.ac.in.ORCID http://orcid.org/0000-0001-9038-6274
Indian Institute of Technology Hyderabad · IN

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Defects in the nanoscale are common in the 2D materials irrespective of the fabricated method. Material performance gets significantly affected due to the presence of defects in 2D materials. In the present study, electronic and mechanical properties of 2D-hexagonal boron nitride (hBN) are investigated. At the electronic scale, the formation energies, band structures were obtained for pristine and defected hBN. The substitutional defects of carbon (C-at-N

Indexed as

2D-hBN defectsElectronic propertiesFracture strengthHexagonal boron nitrideMechanical propertiesMolecular dynamicsStiffness

Identifiers

PMID32620980
OpenAlexW3040123277

What OpenQuestion holds

Textmetadata
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.