ArticleNature communications2020
Non-thermal resistive switching in Mott insulator nanowires.
Article in Nature communications, 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 17 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
17 citing papers in PubMed.
- Beyond the Silicon Plateau: A Convergence of Novel Materials for Transistor Evolution.Nano-micro letters · 2025Review
- High-Resolution Full-Field Structural Microscopy of the Voltage-Induced Filament Formation in VOACS nano · 2025Article
- Electric-Field-Induced Metal-Insulator Transition for Low-Power and Ultrafast Nanoelectronics.Nanomaterials (Basel, Switzerland) · 2025Review
- Mott resistive switching initiated by topological defects.Nature communications · 2024Article
- Local strain inhomogeneities during electrical triggering of a metal-insulator transition revealed by X-ray microscopy.Proceedings of the National Academy of Sciences of the United States of America · 2024Article
- Resistive Avalanches in LaACS materials Au · 2024Article
- Cooperative Thermal-Electric Field Control of Infrared Modulation Using a Vanadium Dioxide Film-Based Modulator.ACS omega · 2023Article
- Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VOCommunications materials · 2023Article
- Energy-adaptive resistive switching with controllable thresholds in insulator-metal transition.RSC advances · 2022Article
- Nanoscale self-organization and metastable non-thermal metallicity in Mott insulators.Nature communications · 2022Article
- Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in VScience advances · 2021Article
- Transverse barrier formation by electrical triggering of a metal-to-insulator transition.Nature communications · 2021Article
- Inherent stochasticity during insulator-metal transition in VOProceedings of the National Academy of Sciences of the United States of America · 2021Article
- Article
- Dynamic Manipulation of THz Waves Enabled by Phase-Transition VONanomaterials (Basel, Switzerland) · 2021Review
- Post-Moore Memory Technology: Sneak Path Current (SPC) Phenomena on RRAM Crossbar Array and Solutions.Micromachines · 2021Article
- Investigation of AlGaN/GaN HFET and VOMicromachines · 2020Article
Corrections and comments
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Authors and funding
6 authors.
Funding
Abstract
Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in the switching process remain controversial. Using nanowires of two archetypal Mott insulators-VO
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Registered trials
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