ArticleACS applied materials & interfaces2020
Nonpolar (112̅0) GaN Metal-Semiconductor-Metal Photodetectors with Superior Performance on Silicon.
Article in ACS applied materials & interfaces, 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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Who cites it
4 citing papers in PubMed.
- Methanol Clipping Modification on Liquid Metal Surface Enhances Photothermal Performance and Biocompatibility.Small (Weinheim an der Bergstrasse, Germany) · 2026Article
- Preparation of GaN/Porous silicon heterojunction photodetector by laser deposition technique.Scientific reports · 2023Article
- Screen-Printable Silver Paste Material for Semitransparent and Flexible Metal-Semiconductor-Metal Photodetectors with Liquid-Phase Procedure.Nanomaterials (Basel, Switzerland) · 2022Article
- Fast-Response Metal-Semiconductor-Metal Junction Ultraviolet Photodetector Based on ZnS:Mn Nanorod Networks via a Cost-Effective Method.ACS omega · 2021Article
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Authors and funding
6 authors.
Funding
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Abstract
This article reports a nonpolar GaN metal-semiconductor-metal (MSM) photodetector (PD) with an ultrahigh responsivity and an ultrafast response speed in the ultraviolet spectral region, which was fabricated on nonpolar (112̅0) GaN stripe arrays with a major improvement in crystal quality grown on patterned (110) silicon substrates by means of using our two-step processes. Our nonpolar GaN MSM-PD exhibits a responsivity of 695.3 A/W at 1 V bias and 12628.3 A/W at 5 V bias, both under 360 nm ultraviolet illumination, which are more than 20 times higher and 4 orders of magnitude higher compared to the current state-of-the-art photodetector, respectively. The nonpolar GaN MSM-PD displays a rise time and a fall time of 66 and 43 μs, respectively, which are 3 orders of magnitude faster compared to the current state-of-the-art photodetector.
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