Evidence map›Paper›PMID 32332726›Full record

ArticleNature communications2020

Record thermopower found in an IrMn-based spintronic stack.

Sa Tu, Timothy Ziman, Guoqiang Yu, Caihua Wan, Junfeng Hu, Hao Wu, Hanchen Wang, Mengchao Liu, Chuanpu Liu, Chenyang Guo and 16 more

Erratum issuedAbstract read
In one paragraph

Article in Nature communications, 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. An erratum has been issued. Cited by 5 papers.

0numbers the graph read from it
0cells of the map it votes in
5citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

5 citing papers in PubMed.

  1. Article
  2. Article
  3. Article
  4. Article
  5. Review
4 · The record

Corrections and comments

5 · Who and what money

Authors and funding

26 authors.

Sa Tu *Fert Beijing Institute, BDBC, School of Microelectronics, Beihang University, 100191, Beijing, China.
Timothy Ziman *Institut Laue-Langevin, 38042, Grenoble, France.ORCID http://orcid.org/0000-0001-9580-2185
Guoqiang Yu *Department of Electrical Engineering, University of California, Los Angeles, CA, 90095, USA.ORCID http://orcid.org/0000-0002-7439-6920
Caihua Wan *Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, 100190, Beijing, China.
Junfeng Hu *Fert Beijing Institute, BDBC, School of Microelectronics, Beihang University, 100191, Beijing, China.ORCID http://orcid.org/0000-0002-2115-4661
Hao Wu *Department of Electrical Engineering, University of California, Los Angeles, CA, 90095, USA.ORCID http://orcid.org/0000-0001-8608-3035
Hanchen WangFert Beijing Institute, BDBC, School of Microelectronics, Beihang University, 100191, Beijing, China.ORCID http://orcid.org/0000-0001-5646-0493
Mengchao LiuElectron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, China.
Chuanpu LiuFert Beijing Institute, BDBC, School of Microelectronics, Beihang University, 100191, Beijing, China.
Chenyang GuoBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, 100190, Beijing, China.
Jianyu ZhangFert Beijing Institute, BDBC, School of Microelectronics, Beihang University, 100191, Beijing, China.
Marco A Cabero ZFert Beijing Institute, BDBC, School of Microelectronics, Beihang University, 100191, Beijing, China.ORCID http://orcid.org/0000-0002-9052-5040
Youguang ZhangFert Beijing Institute, BDBC, School of Microelectronics, Beihang University, 100191, Beijing, China.
Peng GaoElectron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, China.ORCID http://orcid.org/0000-0001-9868-2115
Song LiuShenzhen Institute for Quantum Science and Engineering (SIQSE), and Department of Physics, Southern University of Science and Technology (SUSTech), 518055, Shenzhen, China.
Dapeng YuElectron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, China.
Xiufeng HanBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, 100190, Beijing, China.ORCID http://orcid.org/0000-0001-8053-793X
Ingrid HallsteinsenDepartment of Electronic Systems, Norwegian University of Science and Technology, Trondheim, 7491, Norway.
Dustin A GilbertMaterial Science and Engineering Department, University of Tennessee, Knoxville, TN, 37996, USA.ORCID http://orcid.org/0000-0003-3747-3883
Mamoru MatsuoKavli Institute for Theoretical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China.
Yuichi OhnumaKavli Institute for Theoretical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China.
Peter WölfleInstitute for Theory of Condensed Matter, Karlsruhe Institute of Technology, 76049, Karlsruhe, Germany.
Kang L WangDepartment of Electrical Engineering, University of California, Los Angeles, CA, 90095, USA.ORCID http://orcid.org/0000-0002-9363-1279
Jean-Philippe AnsermetInstitute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland.
Sadamichi MaekawaKavli Institute for Theoretical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China.
Haiming YuFert Beijing Institute, BDBC, School of Microelectronics, Beihang University, 100191, Beijing, China. haiming.yu@buaa.edu.cn.ORCID http://orcid.org/0000-0002-3291-6713

Funding

Ministry of Science and Technology of the People's Republic of China (Chinese Ministry of Science and Technology) 2016YFA0300802Ministry of Science and Technology of the People's Republic of China (Chinese Ministry of Science and Technology) 2017YFA0206200National Natural Science Foundation of China (National Science Foundation of China) 11674020National Natural Science Foundation of China (National Science Foundation of China) U1801661
6 · The paper itself

Abstract

The Seebeck effect converts thermal gradients into electricity. As an approach to power technologies in the current Internet-of-Things era, on-chip energy harvesting is highly attractive, and to be effective, demands thin film materials with large Seebeck coefficients. In spintronics, the antiferromagnetic metal IrMn has been used as the pinning layer in magnetic tunnel junctions that form building blocks for magnetic random access memories and magnetic sensors. Spin pumping experiments revealed that IrMn Néel temperature is thickness-dependent and approaches room temperature when the layer is thin. Here, we report that the Seebeck coefficient is maximum at the Néel temperature of IrMn of 0.6 to 4.0 nm in thickness in IrMn-based half magnetic tunnel junctions. We obtain a record Seebeck coefficient 390 (±10) μV K

Identifiers

PMID32332726
PMCPMC7181642

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