ArticleNanomaterials (Basel, Switzerland)2020
Understanding the Role of Temperature and Drain Current Stress in InSnZnO TFTs with Various Active Layer Thicknesses.
Article in Nanomaterials (Basel, Switzerland), 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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Who cites it
4 citing papers in PubMed.
- Improving TFT Device Performance by Changing the Thickness of the LZTO/ZTO Dual Active Layer.Micromachines · 2024Article
- Influence of NFMaterials (Basel, Switzerland) · 2023Article
- Compact Integration of Hydrogen-Resistant a-InGaZnO and Poly-Si Thin-Film Transistors.Micromachines · 2022Article
- Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film Transistors.Nanomaterials (Basel, Switzerland) · 2020Article
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Authors and funding
4 authors.
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Abstract
Thin-film transistor (TFT) devices composed of metal oxide semiconductors have attracted tremendous research attention globally in recent years. Owing to their ability to offer mobility, metal oxide semiconductor materials can enable high-performance TFTs for next-generation integrated display devices. Nevertheless, further breakthroughs of metal oxide TFTs are mainly obstructed by their long-term variability, the reason for which is not yet fully understood. Herein, TFTs based on InSnZnO (ITZO) with various thicknesses (
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