ArticleScience advances2020
Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed.
Article in Science advances, 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 19 papers.
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Who cites it
19 citing papers in PubMed.
- Non-Arrhenius threshold switching by field-driven dipolar ordering.Nature communications · 2026Article
- Charge-triggered switching mechanism in selenium selector enabling ultralow leakage current.Nature materials · 2026Article
- Leaky-Integrate-Fire Neuron via Synthetic Antiferromagnetic Coupling and Spin-Orbit Torque.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- Binary B-Te Selectors Reinvented: Confined Conductive Paths Unlock Superior Ovonic Threshold Switching.ACS applied materials & interfaces · 2025Article
- Arsenic-free Ge-Te-based ovonic threshold switching material with reduced leakage current.Scientific reports · 2025Article
- Phase-Change Memory for In-Memory Computing.Chemical reviews · 2025Review
- Improving Reliability of 1 Selector-1 ReRAM Crossbar Arrays Through Hybrid Switching Methods.Materials (Basel, Switzerland) · 2025Article
- 2D amorphous solids for sub-nanometer scale devices.Nano convergence · 2024Review
- Preparation and Electrothermal Transport Behavior of SnMaterials (Basel, Switzerland) · 2024Article
- Mechanism for Local-Atomic Structure Changes in Chalcogenide-based Threshold-Switching Devices.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024Article
- Demonstration of an energy-efficient Ising solver composed of Ovonic threshold switch (OTS)-based nano-oscillators (OTSNOs).Nano convergence · 2024Article
- Chalcogenide Ovonic Threshold Switching Selector.Nano-micro letters · 2024Review
- The role of arsenic in the operation of sulfur-based electrical threshold switches.Nature communications · 2023Article
- Advanced atomic force microscopy-based techniques for nanoscale characterization of switching devices for emerging neuromorphic applications.Applied microscopy · 2021Review
- A scheme for enabling the ultimate speed of threshold switching in phase change memory devices.Scientific reports · 2021Article
- Post-Moore Memory Technology: Sneak Path Current (SPC) Phenomena on RRAM Crossbar Array and Solutions.Micromachines · 2021Article
- A Compact Model of Ovonic Threshold Switch Combining Thermal Dissipation Effect.Frontiers in neuroscience · 2021Article
- Ultrahigh drive current and large selectivity in GeS selector.Nature communications · 2020Article
- Ge-Sb-S-Se-Te amorphous chalcogenide thin films towards on-chip nonlinear photonic devices.Scientific reports · 2020Article
Corrections and comments
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Authors and funding
9 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Fifty years after its discovery, the ovonic threshold switching (OTS) phenomenon, a unique nonlinear conductivity behavior observed in some chalcogenide glasses, has been recently the source of a real technological breakthrough in the field of data storage memories. This breakthrough was achieved because of the successful 3D integration of so-called OTS selector devices with innovative phase-change memories, both based on chalcogenide materials. This paves the way for storage class memories as well as neuromorphic circuits. We elucidate the mechanism behind OTS switching by new state-of-the-art materials using electrical, optical, and x-ray absorption experiments, as well as ab initio molecular dynamics simulations. The model explaining the switching mechanism occurring in amorphous OTS materials under electric field involves the metastable formation of newly introduced metavalent bonds. This model opens the way for design of improved OTS materials and for future types of applications such as brain-inspired computing.
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Registered trials
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