Evidence map›Paper›PMID 32116347›Full record

ArticleIEEE transactions on instrumentation and measurement2019

Comparison between NIST Graphene and AIST GaAs Quantized Hall Devices.

Takehiko Oe, Albert F Rigosi, Mattias Kruskopf, Bi-Yi Wu, Hsin-Yen Lee, Yanfei Yang, Randolph E Elmquist, Nobu-Hisa Kaneko, Dean G Jarrett

Open access · greenAbstract read
In one paragraph

Article in IEEE transactions on instrumentation and measurement, 2019. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 9 papers.

0numbers the graph read from it
0cells of the map it votes in
9citing papers in PubMed
2.2field-weighted citation impact, top 12% of its field
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

9 citing papers in PubMed, 29 citations in OpenAlex.

  1. Article
  2. Article
  3. Review
  4. Article
  5. Analysing quantized resistance behaviour in graphene CorbinoJournal of physics D: Applied physics · 2020
    Article
  6. Article
  7. Comparison between Graphene and GaAs Quantized Hall Devices with a Dual Probe.IEEE transactions on instrumentation and measurement · 2020
    Article
  8. The Quantum Hall Effect in the Era of the New SI.Semiconductor science and technology · 2019
    Article
  9. Comparison between NIST Graphene and AIST GaAs Quantized Hall Devices.IEEE transactions on instrumentation and measurement · 2019
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors at 5 institutions in 3 countries.

Takehiko OeNational Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8563, Japan.
Albert F RigosiNational Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Mattias KruskopfUniversity of Maryland, Joint Quantum Institute, College Park, MD 20742, USA.
Bi-Yi WuGraduate Institute of Applied Physics, National Taiwan University, Taipei 10617, Taiwan.
Hsin-Yen LeeTheiss Research, La Jolla, CA 92037, USA.
Yanfei YangUniversity of Maryland, Joint Quantum Institute, College Park, MD 20742, USA.
Randolph E ElmquistNational Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Nobu-Hisa KanekoNational Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8563, Japan.
Dean G JarrettNational Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
National Institute of Standards and Technology · USJapan Advanced Institute of Science and Technology · JPJoint Quantum Institute · USNational Taiwan University · TWTheiss Research · US

Funding

Intramural NIST DOC 9999-NIST
6 · The paper itself

Abstract

Several graphene quantized Hall resistance (QHR) devices manufactured at the National Institute of Standards and Technology (NIST) were compared to GaAs QHR devices and a 100 Ω standard resistor at the National Institute for Advanced Industrial Science and Technology (AIST). Measurements of the 100 Ω resistor with the graphene QHR devices agreed within 5 nΩ/Ω of the values for the 100 Ω resistor obtained through GaAs measurements. The electron density of the graphene devices was adjusted at AIST to restore device properties such that operation was possible at low magnetic flux densities of 4 T to 6 T. This adjustment was accomplished with a functionalization method utilized at NIST, allowing for consistent tunability of the graphene QHR devices with simple annealing. Such a method replaces older and less predictable methods for adjusting graphene for metrological suitability. The milestone results demonstrate the ease with which graphene can be used to make resistance comparison measurements among many National Metrology Institutes.

Indexed as

cryogenic current comparatorelectron densityepitaxial graphenequantized Hall resistancestandard resistor

Identifiers

PMID32116347
PMCPMC7047668
OpenAlexW2962904650

What OpenQuestion holds

Textmetadata
LicenceTDM
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.