ArticleiScience2020
Ultra-high Photovoltage (2.45 V) Forming in Graphene Heterojunction via Quasi-Fermi Level Splitting Enhanced Effect.
Article in iScience, 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
5 citing papers in PubMed.
- High-Detectivity MOCVD-Epitaxial h-BN-Based Vacuum UV Photodetectors With Pt Nanoparticle-Engineered Localized Surface Plasmon Resonance Enhancement.Nanophotonics (Berlin, Germany) · 2026Article
- Heteroepitaxy Growth and Characterization of High-Quality AlN Films for Far-Ultraviolet Photodetection.Nanomaterials (Basel, Switzerland) · 2022Article
- Quasiphonon polaritons.Heliyon · 2020Article
- X-ray radiation excited ultralong (>20,000 seconds) intrinsic phosphorescence in aluminum nitride single-crystal scintillators.Nature communications · 2020Article
- Vacuum-Ultraviolet Photon Detections.iScience · 2020Review
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
4 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Owing to the fast response speed and low energy consumption, photovoltaic vacuum-ultraviolet (VUV) photodetectors show prominent advantages in the field of space science, high-energy physics, and electronics industry. For photovoltaic devices, it is imperative to boost their open-circuit voltage, which is the most direct indicator to measure the photoelectric conversion capability. In this report, a quasi-Fermi level splitting enhanced effect under illumination, benefiting from the variable Fermi level of graphene, is proposed to significantly increase the potential difference up to 2.45 V between the two ends of p-Gr/i-AlN/n-SiC heterojunction photovoltaic device. In addition, the highest external quantum efficiency of 56.1% (under the VUV irradiation of 172 nm) at 0 V bias and the ultra-fast photoresponse of 45 ns further demonstrate the superiority of high-open-circuit-voltage devices. The proposed device design strategy and the adopted effect provide a referential way for the construction of various photovoltaic devices.
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.