ArticleNature communications2020
Substrate induced nanoscale resistance variation in epitaxial graphene.
Article in Nature communications, 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 7 papers.
What it found
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Who cites it
7 citing papers in PubMed.
- Study of Graphene-Based Strain Sensing Output Signals Under External Electromagnetic Interference Conditions.Nanomaterials (Basel, Switzerland) · 2026Article
- Subsurface Interface Structure Controlling Local Electronic Properties of Epitaxial Graphene on SiC(0001).The journal of physical chemistry letters · 2025Article
- Landauer Resistivity Dipole at One-Dimensional Defect Revealed via near-Field Photocurrent Nanoscopy.Nano letters · 2025Article
- Spontaneous emergence of straintronics effects and striped stacking domains in untwisted three-layer epitaxial graphene.Proceedings of the National Academy of Sciences of the United States of America · 2024Article
- Sensitive Characterization of the Graphene Transferred onto Varied Si Wafer Surfaces via Terahertz Emission Spectroscopy and Microscopy (TES/LTEM).Materials (Basel, Switzerland) · 2024Article
- A Review on Carrier Mobilities of Epitaxial Graphene on Silicon Carbide.Materials (Basel, Switzerland) · 2023Review
- Onsager-Casimir frustration from resistance anisotropy in graphene quantum Hall devices.Physical review. B · 2021Article
Corrections and comments
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Authors and funding
11 authors.
Funding
Abstract
Graphene, the first true two-dimensional material, still reveals the most remarkable transport properties among the growing class of two-dimensional materials. Although many studies have investigated fundamental scattering processes, the surprisingly large variation in the experimentally determined resistances is still an open issue. Here, we quantitatively investigate local transport properties of graphene prepared by polymer assisted sublimation growth using scanning tunneling potentiometry. These samples exhibit a spatially homogeneous current density, which allows to analyze variations in the local electrochemical potential with high precision. We utilize this possibility by examining the local sheet resistance finding a significant variation of up to 270% at low temperatures. We identify a correlation of the sheet resistance with the stacking sequence of the 6H silicon carbide substrate and with the distance between the graphene and the substrate. Our results experimentally quantify the impact of the graphene-substrate interaction on the local transport properties of graphene.
Identifiers
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Registered trials
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