ArticleScientific reports2020
Kinetics of the radiative and nonradiative recombination in polar and semipolar InGaN quantum wells.
Article in Scientific reports, 2020. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.
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2 citing papers in PubMed.
- Nitride-Based Quantum Structures in Optoelectronics-A Survey of Colors.Materials (Basel, Switzerland) · 2026Review
- Polarization-Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation.Materials (Basel, Switzerland) · 2024Article
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Authors and funding
7 authors.
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Abstract
We studied mechanisms of recombination in InGaN quantum wells in polar and semipolar structures. Photoluminescence measurements show that the optical emission linewidths for polar and semipolar structures are almost identical suggesting the same level of indium fluctuations in quanutm wells. Their "peak-energy-versus-temperature" relations demonstrate very pronounced "s-shape" effect. Emission linewidth measured by cathodoluminescence does not depend on area from which the light is collected meaning that the fluctuations are smaller that 100 nm. The time scale of recombination process are of the order of 80 ns for polar and 2 ns for semipolar. Energy dispersion of the recombination time is strong in polar structures and very weak in semipolar ones which can be interperted in terms of electric field influence on photoluminescence lifetime energy dispersion. At room temparture emmission is dominated by Schockley-Hall-Read recombination and does not show any dispersion. Rate equation analysis of photoluminescence transients show domination of excitonic recombination in the case of polar samples (low temperature) and bimolecular in the case of semipolar ones. Both types of quantum wells, polar and semipolar look similar from the point of view of localization but differ in their radiative recombination mechanisms.
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