ArticleSensors (Basel, Switzerland)2019
A High-Temperature, Low-Noise Readout ASIC for MEMS-Based Accelerometers.
Article in Sensors (Basel, Switzerland), 2019. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
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Who cites it
1 citing paper in PubMed.
- An 8.72 µW Low-Noise and Wide Bandwidth FEE Design for High-Throughput Pixel-Strip (PS) Sensors.Sensors (Basel, Switzerland) · 2021Article
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Authors and funding
3 authors.
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Abstract
This paper presents the development and measurement results of a complementary metal oxide semiconductor (CMOS) readout application -specific integrated circuit (ASIC) for bulk-silicon microelectromechanical system (MEMS) accelerometers. The proposed ASIC converts the capacitance difference of the MEMS sensor into an analog voltage signal and outputs the analog signal with a buffer. The ASIC includes a switched-capacitor analog front-end (AFE) circuit, a low-noise voltage reference generator, and a multi-phase clock generator. The correlated double sampling technique was used in the AFE circuits to minimize the low-frequency noise of the ASIC. A programmable capacitor array was implemented to compensate for the capacitance offset of the MEMS sensor. The ASIC was developed with a 0.18 μm CMOS process. The test results show that the output noise floor of the low-noise amplifier was -150 dBV/√
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