ArticleScientific reports2019
Three-dimensional a-Si/a-Ge radial heterojunction near-infrared photovoltaic detector.
Article in Scientific reports, 2019. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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5 authors.
Funding
Abstract
In this work, three-dimensional (3D) radial heterojunction photodetectors (PD) were constructed over vertical crystalline Si nanowires (SiNWs), with stacked hydrogenated amorphous germanium (a-Ge:H)/a-Si:H thin film layer as absorbers. The hetero absorber layer is designed to benefit from the type-II band alignment at the a-Ge/a-Si hetero-interface, which could help to enable an automated photo-carrier separation without exterior power supply. By inserting a carefully controlled a-Si passivation layer between the a-Ge:H layer and the p-type SiNWs, we demonstrate first a convenient fabrication of a new hetero a-Ge/a-Si structure operating as self-powered photodetectors (PD) in the near-infrared (NIR) range up to 900 nm, indicating a potential to serve as low cost, flexible and high performance radial junction sensing units for NIR imaging and PD applications.
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