ArticleSensors (Basel, Switzerland)2019
An Optical Filter-Less CMOS Image Sensor with Differential Spectral Response Pixels for Simultaneous UV-Selective and Visible Imaging.
Article in Sensors (Basel, Switzerland), 2019. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
3 citing papers in PubMed.
- Application of Image Sensors to Detect and Locate Electrical Discharges: A Review.Sensors (Basel, Switzerland) · 2022Review
- Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology.Microsystems & nanoengineering · 2022Article
- An Optical Filter-Less CMOS Image Sensor with Differential Spectral Response Pixels for Simultaneous UV-Selective and Visible Imaging.Sensors (Basel, Switzerland) · 2019Article
Corrections and comments
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Authors and funding
3 authors.
Funding
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Abstract
This paper presents a complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) capable of capturing UV-selective and visible light images simultaneously by a single exposure and without employing optical filters, suitable for applications that require simultaneous UV and visible light imaging, or UV imaging in variable light environment. The developed CIS is composed by high and low UV sensitivity pixel types, arranged alternately in a checker pattern. Both pixel types were designed to have matching sensitivities for non-UV light. The UV-selective image is captured by extracting the differential spectral response between adjacent pixels, while the visible light image is captured simultaneously by the low UV sensitivity pixels. Also, to achieve high conversion gain and wide dynamic range simultaneously, the lateral overflow integration capacitor (LOFIC) technology was introduced in both pixel types. The developed CIS has a pixel pitch of 5.6 µm and exhibits 172 µV/e
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Registered trials
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