ArticleNature communications2019
Atomic mechanism of strong interactions at the graphene/sapphire interface.
Article in Nature communications, 2019. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 15 papers.
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Who cites it
15 citing papers in PubMed.
- Reversible Interlayer Coupling/Decoupling in Bilayer Graphene Regulated by Electrochemical Hydrogenation.Precision chemistry · 2026Article
- Co-field-reconciled direct growth of 6-inch monolayer graphene.National science review · 2026Article
- 2D Indium Oxide at the Epitaxial Graphene/SIC Interface: Synthesis, Structure, Properties, and Devices.Advanced materials (Deerfield Beach, Fla.) · 2026Article
- Optimizing the Graphene/α-AlACS applied nano materials · 2025Article
- DFT-Assisted Approach to Low-Temperature Graphene Growth on Sapphire.Small (Weinheim an der Bergstrasse, Germany) · 2025Article
- Controlled Growth of Graphene-Skinned AlAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
- 3D Crystal Construction by Single-Crystal 2D Material Supercell Multiplying.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Article
- Electrochemical sensor based on CuMikrochimica acta · 2024Article
- Wafer-Scale Growth and Transfer of High-Quality MoSAdvanced science (Weinheim, Baden-Wurttemberg, Germany) · 2024Article
- Facile band gap tuning in graphene-brucite heterojunctions.Scientific reports · 2023Article
- Article
- Atomically resolved electronic properties in single layer graphene on α-AlScientific reports · 2022Article
- Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode.Light, science & applications · 2022Article
- Direct growth of wafer-scale highly oriented graphene on sapphire.Science advances · 2021Article
- Toward Large-Scale GaACS applied materials & interfaces · 2021Article
Corrections and comments
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Authors and funding
13 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
For atomically thin two-dimensional materials, interfacial effects may dominate the entire response of devices, because most of the atoms are in the interface/surface. Graphene/sapphire has great application in electronic devices and semiconductor thin-film growth, but the nature of this interface is largely unknown. Here we find that the sapphire surface has a strong interaction with some of the carbon atoms in graphene to form a C-O-Al configuration, indicating that the interface interaction is no longer a simple van der Waals interaction. In addition, the structural relaxation of sapphire near the interface is significantly suppressed and very different from that of a bare sapphire surface. Such an interfacial C-O-Al bond is formed during graphene growth at high temperature. Our study provides valuable insights into understanding the electronic structures of graphene on sapphire and remote control of epitaxy growth of thin films by using a graphene-sapphire substrate.
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