ArticleSensors (Basel, Switzerland)2019
Design and Fabrication of CMOS Microstructures to Locally Synthesize Carbon Nanotubes for Gas Sensing.
Article in Sensors (Basel, Switzerland), 2019. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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4 citing papers in PubMed.
- Fast and efficient Sb-based type-II phototransistors integrated on silicon.APL photonics · 2025Article
- Post-CMOS processing challenges and design developments of CMOS-MEMS microheaters for local CNT synthesis.Microsystems & nanoengineering · 2023Article
- Microheater: material, design, fabrication, temperature control, and applications-a role in COVID-19.Biomedical microdevices · 2021Review
- Special Issue "Advanced Nanomaterials Based Gas Sensors".Sensors (Basel, Switzerland) · 2020Article
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Authors and funding
5 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Carbon nanotubes (CNTs) can be grown locally on custom-designed CMOS microstructures to use them as a sensing material for manufacturing low-cost gas sensors, where CMOS readout circuits are directly integrated. Such a local CNT synthesis process using thermal chemical vapor deposition (CVD) requires temperatures near 900 °C, which is destructive for CMOS circuits. Therefore, it is necessary to ensure a high thermal gradient around the CNT growth structures to maintain CMOS-compatible temperature (below 300 °C) on the bulk part of the chip, where readout circuits are placed. This paper presents several promising designs of CNT growth microstructures and their thermomechanical analyses (by ANSYS Multiphysics software) to check the feasibility of local CNT synthesis in CMOS. Standard CMOS processes have several conductive interconnecting metal and polysilicon layers, both being suitable to serve as microheaters for local resistive heating to achieve the CNT growth temperature. Most of these microheaters need to be partially or fully suspended to produce the required thermal isolation for CMOS compatibility. Necessary CMOS post-processing steps to realize CNT growth structures are discussed. Layout designs of the microstructures, along with some of the microstructures fabricated in a standard AMS 350 nm CMOS process, are also presented in this paper.
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