ArticleMicromachines2019
Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer.
Article in Micromachines, 2019. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
3 citing papers in PubMed.
- Advances in silicon carbide pressure sensors for high-temperature extreme environment sensing.Microsystems & nanoengineering · 2026Review
- Structural Engineering in Piezoresistive Micropressure Sensors: A Focused Review.Micromachines · 2023Review
- Study on the Stability of the Electrical Connection of High-Temperature Pressure Sensor Based on the Piezoresistive Effect of P-Type SiC.Micromachines · 2021Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
9 authors.
Funding
Abstract
In this work, the piezoresistive properties of heavily doped p-type 4H-SiC at room temperature were investigated innovatively. It was verified by a field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), and laser Raman spectroscopy (LRS) that the crystal quality of the epitaxial layer was good. The doping concentration and thickness of the epitaxial layer were measured by secondary ion mass spectrometry (SIMS) to be ~1.12 × 10
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.