Evidence map›Paper›PMID 31492924›Full record

ArticleScientific reports2019

InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K.

Soo Seok Kang, Dae-Myeong Geum, Kisung Kwak, Ji-Hoon Kang, Cheol-Hwee Shim, HyeYoung Hyun, Sang Hyeon Kim, Won Jun Choi, Suk-Ho Choi, Min-Chul Park and 1 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Scientific reports, 2019. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Soo Seok KangCenter for Opto-Electronic materials and devices, Korea Institute of Science and Technology, Seoul, 136-791, Republic of Korea.
Dae-Myeong GeumCenter for Opto-Electronic materials and devices, Korea Institute of Science and Technology, Seoul, 136-791, Republic of Korea.ORCID http://orcid.org/0000-0002-1965-5635
Kisung KwakCenter for Opto-Electronic materials and devices, Korea Institute of Science and Technology, Seoul, 136-791, Republic of Korea.
Ji-Hoon KangCenter for Opto-Electronic materials and devices, Korea Institute of Science and Technology, Seoul, 136-791, Republic of Korea.
Cheol-Hwee ShimAdvanced Analysis Center, Korea Institute of Science and Technology, Seoul, 136-791, Republic of Korea.ORCID http://orcid.org/0000-0002-0542-1782
HyeYoung HyunAdvanced Analysis Center, Korea Institute of Science and Technology, Seoul, 136-791, Republic of Korea.
Sang Hyeon KimCenter for Opto-Electronic materials and devices, Korea Institute of Science and Technology, Seoul, 136-791, Republic of Korea.ORCID http://orcid.org/0000-0002-2517-4408
Won Jun ChoiCenter for Opto-Electronic materials and devices, Korea Institute of Science and Technology, Seoul, 136-791, Republic of Korea.
Suk-Ho ChoiDepartment of Applied Physics and Institute of Natural Sciences, Kyung Hee University, Yongin, 17104, Republic of Korea.
Min-Chul ParkCenter for Opto-Electronic materials and devices, Korea Institute of Science and Technology, Seoul, 136-791, Republic of Korea. minchul@kist.re.kr.
Jin Dong SongCenter for Opto-Electronic materials and devices, Korea Institute of Science and Technology, Seoul, 136-791, Republic of Korea. jdsong@kist.re.kr.ORCID http://orcid.org/0000-0002-3031-8226

Funding

Korea Institute of Science and Technology Information (KISTI) 2E29390Korea Institute of Science and Technology (KIST) 2E29390
6 · The paper itself

Abstract

Short-wave infrared (SWIR) detectors and emitters have a high potential value in several fields of applications, including the internet of things (IoT) and advanced driver assistance systems (ADAS), gas sensing. Indium Gallium Arsenide (InGaAs) photodetectors are widely used in the SWIR region of 1-3 μm; however, they only capture a part of the region due to a cut-off wavelength of 1.7 μm. This study presents an InAs p-i-n photodetector grown on a GaAs substrate (001) by inserting 730-nm thick In

Identifiers

PMID31492924
PMCPMC6731284

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.