ArticleScientific reports2019
Analysis of the hump phenomenon and needle defect states formed by driving stress in the oxide semiconductor.
Article in Scientific reports, 2019. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
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Who cites it
5 citing papers in PubMed.
- AI-driven quantitative review of mobility-stability trade-off in oxide semiconductors.Nano convergence · 2026Review
- Low-frequency noise analysis on asymmetric damage and self-recovery behaviors of ZnSnO thin-film transistors under hot carrier stress.Discover nano · 2024Article
- Hydrogen diffusion and its electrical properties variation as a function of the IGZO stacking structure.Scientific reports · 2022Article
- Parasitic Current Induced by Gate Overlap in Thin-Film Transistors.Materials (Basel, Switzerland) · 2021Article
- Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer.Nanomaterials (Basel, Switzerland) · 2021Article
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Authors and funding
6 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
The reduction in current ability accompanied by the hump phenomenon in oxide semiconductor thin-film transistors to which high DC voltages and AC drive voltages are applied has not been studied extensively, although it is a significant bottleneck in the manufacture of integrated circuits. Here, we report on the origin of the hump and current drop in reliability tests caused by the degradation in the oxide semiconductor during a circuit driving test. The hump phenomenon and current drop according to two different driving stresses were verified. Through a numerical computational simulation, we confirmed that this issue can be caused by an additional "needle", a shallow (~0.2 eV) and narrow (<0.1 eV), defect state near the conduction band minimum (CBM). This is also discussed in terms of the dual current path caused by leakage current in the channel edge.
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