ArticleNanomaterials (Basel, Switzerland)2019
ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition.
Article in Nanomaterials (Basel, Switzerland), 2019. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
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5 citing papers in PubMed.
- Effects of Hydrogen Dissociation During Gas Flooding on Formation of Metal Hydride Cluster Ions in Secondary Ion Mass Spectrometry.Nanomaterials (Basel, Switzerland) · 2024Article
- Sputtering-deposited amorphous SrVOScientific reports · 2020Article
- Process Optimization of Via Plug Multilevel Interconnections in CMOS Logic Devices.Micromachines · 2019Article
- Improvement on Fully Filled Through Silicon Vias by Optimized Sputtering and Electroplating Conditions.Materials (Basel, Switzerland) · 2019Article
- Editorial for the Special Issue "Characterization of Nanomaterials: Selected Papers from 6th Dresden Nanoanalysis Symposium".Nanomaterials (Basel, Switzerland) · 2019Article
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7 authors.
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Abstract
For the analysis of thin films, with high aspect ratio (HAR) structures, time-of-flight secondary ion mass spectrometry (ToF-SIMS) overcomes several challenges in comparison to other frequently used techniques such as electron microscopy. The research presented herein focuses on two different kinds of HAR structures that represent different semiconductor technologies. In the first study, ToF-SIMS is used to illustrate cobalt seed layer corrosion by the copper electrolyte within the large through-silicon-vias (TSVs) before and after copper electroplating. However, due to the sample's surface topography, ToF-SIMS analysis proved to be difficult due to the geometrical shadowing effects. Henceforth, in the second study, we introduce a new test platform to eliminate the difficulties with the HAR structures, and again, use ToF-SIMS for elemental analysis. We use data image slicing of 3D ToF-SIMS analysis combined with lateral HAR test chips (PillarHall™) to study the uniformity of silicon dopant concentration in atomic layer deposited (ALD) HfO
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