Evidence map›Paper›PMID 31276101›Full record

ArticleNature electronics2018

Metrology for the next generation of semiconductor devices.

N G Orji, M Badaroglu, B M Barnes, C Beitia, B D Bunday, U Celano, R J Kline, M Neisser, Y Obeng, A E Vladar

Abstract read
In one paragraph

Article in Nature electronics, 2018. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 54 papers.

0numbers the graph read from it
0cells of the map it votes in
54citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

54 citing papers in PubMed.

  1. Article
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  10. Ultrafast Dynamic Defect Inspection With Computational Neuromorphic Imaging.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025
    Article
  11. Article
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  13. Review
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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

N G OrjiNational Institute of Standards and Technology, Gaithersburg, Maryland, 20899, USA.
M BadarogluHuawei Technologies, Leuven, Belgium.
B M BarnesNational Institute of Standards and Technology, Gaithersburg, Maryland, 20899, USA.
C BeitiaUniv. Grenoble Alpes, CEA, LETI, MINATEC Campus, F-38054 Grenoble Cedex9, France.
B D BundayMalta, NY, 12020, USA.
U CelanoIMEC, Kapeldreef 75, B-3001 Leuven, Belgium.
R J KlineNational Institute of Standards and Technology, Gaithersburg, Maryland, 20899, USA.
M NeisserKempur Microelectronics Inc., Beijing China.
Y ObengNational Institute of Standards and Technology, Gaithersburg, Maryland, 20899, USA.
A E VladarNational Institute of Standards and Technology, Gaithersburg, Maryland, 20899, USA.

Funding

Intramural NIST DOC 9999-NIST
6 · The paper itself

Abstract

The semiconductor industry continues to produce ever smaller devices that are ever more complex in shape and contain ever more types of materials. The ultimate sizes and functionality of these new devices will be affected by fundamental and engineering limits such as heat dissipation, carrier mobility and fault tolerance thresholds. At present, it is unclear which are the best measurement methods needed to evaluate the nanometre-scale features of such devices and how the fundamental limits will affect the required metrology. Here, we review state-of-the-art dimensional metrology methods for integrated circuits, considering the advantages, limitations and potential improvements of the various approaches. We describe how integrated circuit device design and industry requirements will affect lithography options and consequently metrology requirements. We also discuss potentially powerful emerging technologies and highlight measurement problems that at present have no obvious solution.

Indexed as

AFMCD-SAXnanometrologyScatterometrySEMTEM

Identifiers

PMID31276101
PMCPMC6605074

What OpenQuestion holds

Textmetadata
LicenceTDM
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.