Evidence map›Paper›PMID 31222031›Full record

ArticleScientific reports2019

Enhancing silicide formation in Ni/Si(111) by Ag-Si particles at the interface.

Cheng-Hsun-Tony Chang, Pei-Cheng Jiang, Yu-Ting Chow, Hsi-Lien Hsiao, Wei-Bin Su, Jyh-Shen Tsay

Abstract read
In one paragraph

Article in Scientific reports, 2019. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Cheng-Hsun-Tony ChangDepartment of Physics, National Taiwan Normal University, Taipei, 116, Taiwan.ORCID http://orcid.org/0000-0002-9950-6911
Pei-Cheng JiangDepartment of Physics, National Taiwan Normal University, Taipei, 116, Taiwan.
Yu-Ting ChowDepartment of Physics, National Taiwan Normal University, Taipei, 116, Taiwan.
Hsi-Lien HsiaoDepartment of Physics, Tunghai University, Taichung, 407, Taiwan.
Wei-Bin SuInstitute of Physics, Academia Sinica, Taipei, 11529, Taiwan.
Jyh-Shen TsayDepartment of Physics, National Taiwan Normal University, Taipei, 116, Taiwan. jstsay@phy.ntnu.edu.tw.

Funding

Ministry of Science and Technology, Taiwan (Ministry of Science and Technology of Taiwan) MOST 106-2112-M-003-010
6 · The paper itself

Abstract

Compound formation at a metal/semiconductor interface plays crucial roles in the properties of many material systems. Applications of Ni silicides span numerous areas and have the potential to be used as new functionalities. However, the magnetic properties of ultrathin Ni layers on silicon surfaces and related chemical compositions at the interface are not fully understood and the influence of Ag additives on the reactivity of Ni/Si(111) remain unclear. We report herein on the fact that the dominant species produced at the interface is NiSi, which is produced by the spontaneous formation of strong bonds between Ni and Si atoms. Assuming that a Ni layer is formed over a NiSi layer with the total coverage as a constraint, we established a chemical shift-related concentration model that, in effect, represents a practical method for determining the amount of ultrathin Ni silicides that are produced at the buried interface. The formation of Ag-Si particles provide a viable strategy for enhancing silicide formation via a specific interaction transfer mechanism, even at room temperature. The mechanism is related to differences in the enthalpies of formation ΔH

Identifiers

PMID31222031
PMCPMC6586651

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.