Evidence map›Paper›PMID 31164646›Full record

ArticleNature communications2019

Realization of wafer-scale nanogratings with sub-50 nm period through vacancy epitaxy.

Qiushi Huang, Qi Jia, Jiangtao Feng, Hao Huang, Xiaowei Yang, Joerg Grenzer, Kai Huang, Shibing Zhang, Jiajie Lin, Hongyan Zhou and 11 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2019. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.

0numbers the graph read from it
0cells of the map it votes in
3citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

3 citing papers in PubMed.

  1. Nanoscale Ripples at the Surface of SrTiOSmall (Weinheim an der Bergstrasse, Germany) · 2026
    Article
  2. Article
  3. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

21 authors.

Qiushi HuangState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200092, China.
Qi JiaState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200092, China.
Jiangtao FengKey Laboratory of Advanced Micro-Structured Materials MOE, Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China.
Hao HuangState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200092, China.
Xiaowei YangKey Laboratory of Advanced Micro-Structured Materials MOE, Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China.
Joerg GrenzerInstitute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, Dresden, 01328, Germany.
Kai HuangState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200092, China.
Shibing ZhangState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200092, China.
Jiajie LinState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200092, China.
Hongyan ZhouState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200092, China.
Tiangui YouState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200092, China.
Wenjie YuState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200092, China.
Stefan FacskoInstitute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, Dresden, 01328, Germany.ORCID http://orcid.org/0000-0003-3698-3793
Philippe JonnardSorbonne Université, Faculté des Sciences et Ingénierie, UMR CNRS, Laboratoire de Chimie Physique - Matière et Rayonnement, boîte courrier 1140, 4 place Jussieu F-75252, Paris cedex 05, France.ORCID http://orcid.org/0000-0001-6162-1706
Meiyi WuSorbonne Université, Faculté des Sciences et Ingénierie, UMR CNRS, Laboratoire de Chimie Physique - Matière et Rayonnement, boîte courrier 1140, 4 place Jussieu F-75252, Paris cedex 05, France.
Angelo GigliaCNR Istituto Officina Materiali, Trieste, 34149, Italy.
Zhong ZhangKey Laboratory of Advanced Micro-Structured Materials MOE, Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China.
Zhi LiuState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200092, China.ORCID http://orcid.org/0000-0002-8973-6561
Zhanshan WangKey Laboratory of Advanced Micro-Structured Materials MOE, Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China.
Xi WangState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200092, China.
Xin OuState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200092, China. ouxin@mail.sim.ac.cn.

Funding

National Natural Science Foundation of China (National Science Foundation of China) 11227902National Natural Science Foundation of China (National Science Foundation of China) U1732268
6 · The paper itself

Abstract

Gratings, one of the most important energy dispersive devices, are the fundamental building blocks for the majority of optical and optoelectronic systems. The grating period is the key parameter that limits the dispersion and resolution of the system. With the rapid development of large X-ray science facilities, gratings with periodicities below 50 nm are in urgent need for the development of ultrahigh-resolution X-ray spectroscopy. However, the wafer-scale fabrication of nanogratings through conventional patterning methods is difficult. Herein, we report a maskless and high-throughput method to generate wafer-scale, multilayer gratings with period in the sub-50 nm range. They are fabricated by a vacancy epitaxy process and coated with X-ray multilayers, which demonstrate extremely large angular dispersion at approximately 90 eV and 270 eV. The developed new method has great potential to produce ultrahigh line density multilayer gratings that can pave the way to cutting edge high-resolution spectroscopy and other X-ray applications.

Identifiers

PMID31164646
PMCPMC6547753

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