ArticleThe journal of physical chemistry. C, Nanomaterials and interfaces2019
Silicon Substitution in Nanotubes and Graphene via Intermittent Vacancies.
Article in The journal of physical chemistry. C, Nanomaterials and interfaces, 2019. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 7 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
7 citing papers in PubMed.
- Scalable bottom-up synthesis of Co-Ni-doped graphene.Science advances · 2024Article
- Identifying and manipulating single atoms with scanning transmission electron microscopy.Chemical communications (Cambridge, England) · 2022Review
- Nanotube Functionalization: Investigation, Methods and Demonstrated Applications.Materials (Basel, Switzerland) · 2022Review
- Beam-driven Dynamics of Aluminium Dopants in Graphene.2d materials · 2022Article
- Atomic-Level Structural Engineering of Graphene on a Mesoscopic Scale.Nano letters · 2021Article
- Exploring order parameters and dynamic processes in disordered systems via variational autoencoders.Science advances · 2021Article
- Direct imaging of light-element impurities in graphene reveals triple-coordinated oxygen.Nature communications · 2019Article
Corrections and comments
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Authors and funding
10 authors.
Funding
Abstract
The chemical and electrical properties of single-walled carbon nanotubes (SWCNTs) and graphene can be modified by the presence of covalently bound impurities. Although this can be achieved by introducing chemical additives during synthesis, it often hinders growth and leads to limited crystallite size and quality. Here, through the simultaneous formation of vacancies with low-energy argon plasma and the thermal activation of adatom diffusion by laser irradiation, silicon impurities are incorporated into the lattice of both materials. After an exposure of ∼1 ion/nm
Identifiers
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.