ArticleSensors (Basel, Switzerland)2019
Temperature Characteristics of a Pressure Sensor Based on BN/Graphene/BN Heterostructure.
Article in Sensors (Basel, Switzerland), 2019. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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Who cites it
3 citing papers in PubMed, 23 citations in OpenAlex.
- Graphene MEMS and NEMS.Microsystems & nanoengineering · 2024Review
- Improved High-Yield PMMA/Graphene Pressure Sensor and Sealed Gas Effect Analysis.Micromachines · 2020Article
- The Effect of Periodic Spatial Perturbations on the Emission Rates of Quantum Dots near Graphene Platforms.Materials (Basel, Switzerland) · 2020Article
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6 authors at 2 institutions in 1 country.
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Abstract
Temperature is a significant factor in the application of graphene-based pressure sensors. The influence of temperature on graphene pressure sensors is twofold: an increase in temperature causes the substrates of graphene pressure sensors to thermally expand, and thus, the graphene membrane is stretched, leading to an increase in the device resistance; an increase in temperature also causes a change in the graphene electrophonon coupling, resulting in a decrease in device resistance. To investigate which effect dominates the influence of temperature on the pressure sensor based on the graphene-boron nitride (BN) heterostructure proposed in our previous work, the temperature characteristics of two BN/graphene/BN heterostructures with and without a microcavity beneath them were analyzed in the temperature range 30-150 °C. Experimental results showed that the resistance of the BN/graphene/BN heterostructure with a microcavity increased with the increase in temperature, and the temperature coefficient was up to 0.25%°C
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