ArticleThe journal of physical chemistry. C, Nanomaterials and interfaces2019
Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides.
Article in The journal of physical chemistry. C, Nanomaterials and interfaces, 2019. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 32 papers.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
32 citing papers in PubMed.
- Contact modulation in NbXNanoscale advances · 2026Article
- Ultralow Platinum Content in Defect-Rich Tungsten Disulfide: Approaching Platinum Performance in Proton Exchange Membrane Water Electrolyzers.ACS applied materials & interfaces · 2026Article
- Contact engineering of metallic Ni-integrated niobium sulfide via HScientific reports · 2026Article
- High-Performance Self Powered Broadband Photodetection in Graphene-Contacted MoTeSmall (Weinheim an der Bergstrasse, Germany) · 2026Article
- Direct Formation of Stable 1T' Molybdenum Telluride (MoTeACS applied materials & interfaces · 2025Article
- Structural and Electric Characterization of Sputtered Pt/WSeACS omega · 2025Article
- Ultrathin Gallium Oxide as Both Surface Passivation Layer with Conductive Filament Contacts and Alternative Gate Dielectric for 2D MOSFETs.Small (Weinheim an der Bergstrasse, Germany) · 2025Article
- High-Performance Phototransistor Based on a 2D Polybenzimidazole Polymer.Advanced materials (Deerfield Beach, Fla.) · 2025Article
- Barrier-Free Carrier Injection in 2D WSeNanomaterials (Basel, Switzerland) · 2025Article
- Improved Metal-Semiconductor Interface in Monolayer (1L)-MoSACS applied materials & interfaces · 2025Article
- Large-scale alkali-assisted growth of monolayer and bilayer WSeNature communications · 2025Article
- Photolithography-Induced Doping and Interface Modulation for High-Performance Monolayer WSeNano letters · 2025Article
- Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits.Nanomaterials (Basel, Switzerland) · 2024Review
- Antimony-Platinum Modulated Contact Enabling Majority Carrier Polarity Selection on a Monolayer Tungsten Diselenide Channel.Nano letters · 2024Article
- Constrained patterning of orientated metal chalcogenide nanowires and their growth mechanism.Nature communications · 2024Article
- Defects and Defect Engineering of Two-Dimensional Transition Metal Dichalcogenide (2D TMDC) Materials.Nanomaterials (Basel, Switzerland) · 2024Review
- Recent Progress in Transition Metal Dichalcogenides for Electrochemical Biomolecular Detection.Micromachines · 2023Review
- Overcoming the Fermi-Level Pinning Effect in the Nanoscale Metal and Silicon Interface.Nanomaterials (Basel, Switzerland) · 2023Article
- Ultrafast van der Waals diode using graphene quantum capacitance and Fermi-level depinning.Science advances · 2023Article
- Role of Chalcogen Defect Introducing Metal-Induced Gap States and Its Implications for Metal-TMDs' Interface Chemistry.ACS omega · 2023Article
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
8 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Understanding the electron transport through transition-metal dichalcogenide (TMDC)-based semiconductor/metal junctions is vital for the realization of future TMDC-based (opto-)electronic devices. Despite the bonding in TMDCs being largely constrained within the layers, strong Fermi-level pinning (FLP) was observed in TMDC-based devices, reducing the tunability of the Schottky barrier height. We present evidence that metal-induced gap states (MIGS) are the origin for the large FLP similar to conventional semiconductors. A variety of TMDCs (MoSe
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.