ArticleScientific reports2019
Concept and modelling of memsensors as two terminal devices with enhanced capabilities in neuromorphic engineering.
Article in Scientific reports, 2019. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 9 papers.
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Who cites it
9 citing papers in PubMed.
- Memsensing by surface ion migration within Debye length.Nature materials · 2026Article
- A memristive circuit for self-organized network topology formation based on guided axon growth.Scientific reports · 2024Article
- Extended Higher-Order Elements with Frequency-Doubled Parameters: The Hysteresis Loops Are Always of Type II.Sensors (Basel, Switzerland) · 2023Article
- Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications.Nanomaterials (Basel, Switzerland) · 2023Review
- Extended and Generic Higher-Order Elements for MEMS Modeling.Sensors (Basel, Switzerland) · 2022Article
- Photomemristive sensingMaterials horizons · 2022Article
- Article
- Enhancing Reliability of Studies on Single Filament Memristive Switching via an Unconventional cAFM Approach.Nanomaterials (Basel, Switzerland) · 2021Article
- Anomalous electrical conduction and negative temperature coefficient of resistance in nanostructured gold resistive switching films.Scientific reports · 2020Article
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Authors and funding
7 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
We report on memsensors, a class of two terminal devices that combines features of memristive and sensor devices. Apart from a pinched hysteresis (memristive property) and stimulus dependent electrical resistance (sensing property) further properties like dynamic adaptation to an external stimulus emerge. We propose a three component equivalent circuit to model the memsensor electrical behaviour. In this model we find stimulus dependent hysteresis, a delayed response to the sensory signal and adaptation. Stimulus dependent IV hysteresis as a fingerprint of a memsensor device is experimentally shown for memristive ZnO microrods. Adaptation in memsensor devices as found in our simulations resembles striking similarities to the biology. Especially the stimulus dependency of the IV hysteresis and the adaptation to external stimuli are superior features for application of memsensors in neuromorphic engineering. Based on the simulations and experimental findings we propose design rules for memsensors that will facilitate further research on memsensitive systems.
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Registered trials
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