Evidence map›Paper›PMID 30479910›Full record

ReviewAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2018

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates.

Afzal Khan, Sk Masiul Islam, Shahzad Ahmed, Rishi R Kumar, Mohammad R Habib, Kun Huang, Ming Hu, Xuegong Yu, Deren Yang

Abstract readReview
In one paragraph

Review in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2018. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 18 papers.

0numbers the graph read from it
0cells of the map it votes in
18citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

18 citing papers in PubMed.

  1. Review
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  6. Multiscale Models of CVD Process: Review and Prospective.Materials (Basel, Switzerland) · 2024
    Review
  7. Article
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  12. Review
  13. Article
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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Afzal KhanState Key Laboratory of Silicon Materials and School of Materials Science and Engineering Zhejiang University Hangzhou Zhejiang 310027 China.
Sk Masiul IslamOptoelectronics and MOEMS Group Council of Scientific and Industrial Research-Central Electronics Engineering Research Institute Pilani 333031 Rajasthan India.
Shahzad AhmedCentre for Nanoscience and Nanotechnology Jamia Millia Islamia (Central University) New Delhi 110025 India.
Rishi R KumarCentre for Nanoscience and Nanotechnology Jamia Millia Islamia (Central University) New Delhi 110025 India.
Mohammad R HabibState Key Laboratory of Silicon Materials and College of Information Science and Electronic Engineering Zhejiang University Hangzhou Zhejiang 310027 China.
Kun HuangState Key Laboratory of Silicon Materials and School of Materials Science and Engineering Zhejiang University Hangzhou Zhejiang 310027 China.
Ming HuState Key Laboratory of Silicon Materials and School of Materials Science and Engineering Zhejiang University Hangzhou Zhejiang 310027 China.
Xuegong YuState Key Laboratory of Silicon Materials and School of Materials Science and Engineering Zhejiang University Hangzhou Zhejiang 310027 China.
Deren YangState Key Laboratory of Silicon Materials and School of Materials Science and Engineering Zhejiang University Hangzhou Zhejiang 310027 China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

To fabricate graphene based electronic and optoelectronic devices, it is highly desirable to develop a variety of metal-catalyst free chemical vapor deposition (CVD) techniques for direct synthesis of graphene on dielectric and semiconducting substrates. This will help to avoid metallic impurities, high costs, time consuming processes, and defect-inducing graphene transfer processes. Direct CVD growth of graphene on dielectric substrates is usually difficult to accomplish due to their low surface energy. However, a low-temperature plasma enhanced CVD technique could help to solve this problem. Here, the recent progress of metal-catalyst free direct CVD growth of graphene on technologically important dielectric (SiO

Indexed as

catalyst freedielectricsdirect chemical vapor deposition (CVD) growthgraphenesemiconductors

Identifiers

PMID30479910
PMCPMC6247071

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.