Evidence map›Paper›PMID 30460420›Full record

ArticleNanoscale research letters2018

Effect of Post Thermal Annealing on the Optical Properties of InP/ZnS Quantum Dot Films.

Bowen Zhang, Zhipeng Wei, Xinwei Wang, Xuan Fang, Dengkui Wang, Xian Gao, Dan Fang, Xiaohua Wang, Rui Chen

Abstract read
In one paragraph

Article in Nanoscale research letters, 2018. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.

0numbers the graph read from it
0cells of the map it votes in
4citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

4 citing papers in PubMed.

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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Bowen ZhangState Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun, 130022, China.
Zhipeng WeiState Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun, 130022, China. zpweicust@126.com.
Xinwei WangState Key Laboratory of High Power Semiconductor Laser, School of Materials Science and Engineering, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun, 130022, China.
Xuan FangState Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun, 130022, China.
Dengkui WangState Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun, 130022, China.
Xian GaoState Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun, 130022, China.
Dan FangState Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun, 130022, China.
Xiaohua WangState Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun, 130022, China.
Rui ChenDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, Guangdong, China. chen.r@sustc.edu.cn.

Funding

the Foundation of NANO X 18JG01the Foundation of State Key Laboratory of High Power Semiconductor Lasers, the Developing Project of Science and Technology of Jilin Province 20160519007JH, 20160520117JH, 20160101255JC, 20160204074GX, 20170520117JHthe national 1000 plan for young talents and Shenzhen Science and Technology Innovation Committee JCYJ20150630162649956, JCYJ20150930160634263, and KQTD2015071710313656the National Natural Science Foundation of China 61704011, 61574022, 61504012, 61674021, 11404219, 11404161, 11574130, 11674038
6 · The paper itself

Abstract

The enhancement of optical properties via thermal annealing on InP/ZnS core/shell quantum dot (QD) film was investigated in this work. The increase of emission intensities of the QD films was observed after thermal annealing at 180 °C for 5 min. Through temperature dependence photoluminescence (TDPL) and power dependence photoluminescence (PL) measurement, the peak located at the low-energy shoulder was confirmed to be localized state emission and the high energy one comes from free-carrier emission. Moreover, from the TDPL spectra of the sample annealed at 180 °C for 5 min, the full width at half maximum (FWHM) of localization state emission was nearly the same before which is 250 K and then decreased with increasing temperature. However, the FWHM was decreased significantly when temperature increased in the untreated sample. We conclude that the escape of localization states with increasing temperature contributes to this anomaly phenomenon. Our studies have significance on the application of QDs in electroluminescence devices and down-conversion light-emitting devices.

Indexed as

InP/ZnS QD filmOptical propertiesThermal annealing

Identifiers

PMID30460420
PMCPMC6246751

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.