ArticleACS applied materials & interfaces2018
Consecutive Junction-Induced Efficient Charge Separation Mechanisms for High-Performance MoS
Article in ACS applied materials & interfaces, 2018. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 8 papers.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
8 citing papers in PubMed.
- Solution-Processed Multi-Junction Optoelectronic Synapses for Mode-Switchable SWIR Neuromorphic Vision Sensing.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2026Article
- High Performance Phototransistor Based on 0D-CsPbBrNanomaterials (Basel, Switzerland) · 2025Article
- High-sensitivity hybrid MoSeRSC advances · 2024Article
- Controlled p-Type Doping of MoSNanomaterials (Basel, Switzerland) · 2022Article
- Recent Advances in Two-Dimensional Quantum Dots and Their Applications.Nanomaterials (Basel, Switzerland) · 2021Review
- A review of molybdenum disulfide (MoSRSC advances · 2020Review
- PbE (E = S, Se) Colloidal Quantum Dot-Layered 2D Material Hybrid Photodetectors.Nanomaterials (Basel, Switzerland) · 2020Review
- Ultrasensitive MoSNature communications · 2019Article
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Authors and funding
14 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Phototransistors that are based on a hybrid vertical heterojunction structure of two-dimensional (2D)/quantum dots (QDs) have recently attracted attention as a promising device architecture for enhancing the quantum efficiency of photodetectors. However, to optimize the device structure to allow for more efficient charge separation and transfer to the electrodes, a better understanding of the photophysical mechanisms that take place in these architectures is required. Here, we employ a novel concept involving the modulation of the built-in potential within the QD layers for creating a new hybrid MoS
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