ArticleJournal of biomedical materials research. Part B, Applied biomaterials2019
Effect of oxidation on intrinsic residual stress in amorphous silicon carbide films.
Article in Journal of biomedical materials research. Part B, Applied biomaterials, 2019. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 4 papers.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
4 citing papers in PubMed.
- Mechanics of Long-Shank 5 mm Neural Probe Insertion into the Rat Brain: Effects of Geometry and Vibration-Assisted Insertion.Micromachines · 2026Article
- Electrical characterization and accelerated aging of amorphous silicon carbide implantable encapsulation.Journal of neural engineering · 2025Article
- Amorphous SiC Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition for Passivation in Biomedical Devices.Materials (Basel, Switzerland) · 2024Review
- Intraneural ultramicroelectrode arrays for function-specific interfacing to the vagus nerve.Biosensors & bioelectronics · 2020Article
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Authors and funding
7 authors.
Funding
Abstract
The change in residual stress in plasma enhanced chemical vapor deposition amorphous silicon carbide (a-SiC:H) films exposed to air and wet ambient environments is investigated. A close relationship between stress change and deposition condition is identified from mechanical and chemical characterization of a-SiC:H films. Evidence of amorphous silicon carbide films reacting with oxygen and water vapor in the ambient environment are presented. The effect of deposition parameters on oxidation and stress variation in a-SiC:H film is studied. It is found that the films deposited at low temperature or power are susceptible to oxidation and undergo a notable increase in compressive stress over time. Furthermore, the films deposited at sufficiently high temperature (≥325 C) and power density (≥0.2 W cm
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