Evidence map›Paper›PMID 30301948›Full record

ArticleScientific reports2018

Towards epitaxial graphene p-n junctions as electrically programmable quantum resistance standards.

Jiuning Hu, Albert F Rigosi, Mattias Kruskopf, Yanfei Yang, Bi-Yi Wu, Jifa Tian, Alireza R Panna, Hsin-Yen Lee, Shamith U Payagala, George R Jones and 6 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Scientific reports, 2018. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 13 papers.

0numbers the graph read from it
0cells of the map it votes in
13citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

13 citing papers in PubMed.

  1. Article
  2. Article
  3. Article
  4. Article
  5. Article
  6. Article
  7. Article
  8. Comparison between Graphene and GaAs Quantized Hall Devices with a Dual Probe.IEEE transactions on instrumentation and measurement · 2020
    Article
  9. Analysing quantized resistance behaviour in graphene CorbinoJournal of physics D: Applied physics · 2020
    Article
  10. Development of gateless quantum Hall checkerboardJournal of physics D: Applied physics · 2020
    Article
  11. Article
  12. Article
  13. The Quantum Hall Effect in the Era of the New SI.Semiconductor science and technology · 2019
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

16 authors.

Jiuning HuPhysical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA. hujiuning@gmail.com.
Albert F RigosiPhysical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA. albert.rigosi@nist.gov.ORCID http://orcid.org/0000-0002-8189-3829
Mattias KruskopfPhysical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.
Yanfei YangPhysical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.
Bi-Yi WuPhysical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.ORCID http://orcid.org/0000-0003-2646-4690
Jifa TianPhysical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.
Alireza R PannaPhysical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.
Hsin-Yen LeePhysical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.
Shamith U PayagalaPhysical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.
George R JonesPhysical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.
Marlin E KraftPhysical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.
Dean G JarrettPhysical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.
Kenji WatanabeNational Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan.ORCID http://orcid.org/0000-0003-3701-8119
Takashi TaniguchiNational Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan.
Randolph E ElmquistPhysical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.
David B NewellPhysical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.

Funding

DOC | National Institute of Standards and Technology (NIST) 70NANB12H184DOC | National Institute of Standards and Technology (NIST) 70NANB12H185
6 · The paper itself

Abstract

We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant [Formula: see text] with a relative uncertainty of 10

Identifiers

PMID30301948
PMCPMC6177418

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.