Characterization of the Piezoresistive Effects of Silicon Nanowires.

Seohyeong Jang, Jinwoo Sung, Bobaro Chang, Taeyup Kim, Hyoungho Ko, Kyo-In Koo, Dong-Il Dan Cho

Abstract read

In one paragraph

Article in Sensors (Basel, Switzerland), 2018. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it

0cells of the map it votes in

1citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

Four-Point Measurement Setup for Correlative Microscopy of Nanowires.Nanomaterials (Basel, Switzerland) · 2023
Article

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

7 authors.

Seohyeong JangDepartment of Electrical and Computer Engineering, Automation System Research Institute (ASRI), Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, Korea. jsh4693@snu.ac.kr.

Jinwoo SungDepartment of Electrical and Computer Engineering, Automation System Research Institute (ASRI), Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, Korea. jwsung0919@snu.ac.kr.

Bobaro ChangDepartment of Electrical and Computer Engineering, Automation System Research Institute (ASRI), Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, Korea. sbobaro@snu.ac.kr.

Taeyup KimDepartment of Electrical and Computer Engineering, Automation System Research Institute (ASRI), Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, Korea. taeyupk@snu.ac.kr.

Hyoungho KoDepartment of Electronics Engineering, Chungnam National University, Daejeon 34134, Korea. hhko@cnu.ac.kr.ORCID 0000-0001-5348-3585

Kyo-In KooDepartment of Biomedical Engineering, University of Ulsan, Ulsan 44610, Korea. kikoo@ulsan.ac.kr.ORCID 0000-0003-4173-9218

Dong-Il Dan ChoDepartment of Electrical and Computer Engineering, Automation System Research Institute (ASRI), Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, Korea. dicho@snu.ac.kr.ORCID 0000-0002-8040-5803

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Silicon nanowires (SiNWs) have received attention in recent years due to their anomalous piezoresistive (PZR) effects. Although the PZR effects of SiNWs have been extensively researched, they are still not fully understood. Herein, we develop a new model of the PZR effects of SiNWs to characterize the PZR effects. First, the resistance of SiNW is modeled based on the surface charge density. The characteristics of SiNW, such as surface charge and effective conducting area, can be estimated by using this resistance model. Then, PZR effects are modeled based on stress concentration and piezopinch effects. Stress concentration as a function of the physical geometry of SiNWs can amplify PZR effects by an order of magnitude. The piezopinch effects can also result in increased PZR effects that are at least two times greater than that of bulk silicon. Experimental results show that the proposed model can predict the PZR effects of SiNWs accurately.

Indexed as

nonlinearitypiezoresistive effectssilicon nanowiresurface depletion effects

Identifiers

PMID30275417

DOI10.3390/s18103304

PMCPMC6210127

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.