Evidence map›Paper›PMID 30081483›Full record

ArticleNanomaterials (Basel, Switzerland)2018

Feasible Route for a Large Area Few-Layer MoS₂ with Magnetron Sputtering.

Wei Zhong, Sunbin Deng, Kai Wang, Guijun Li, Guoyuan Li, Rongsheng Chen, Hoi-Sing Kwok

Open access · goldAbstract read
In one paragraph

Article in Nanomaterials (Basel, Switzerland), 2018. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.

0numbers the graph read from it
0cells of the map it votes in
6citing papers in PubMed
1.5field-weighted citation impact, top 18% of its field
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

6 citing papers in PubMed, 39 citations in OpenAlex.

  1. Engineered PN MoSSensors (Basel, Switzerland) · 2026
    Article
  2. Article
  3. Article
  4. Preparation and Properties of 2D Materials.Nanomaterials (Basel, Switzerland) · 2020
    Article
  5. Article
  6. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

7 authors at 2 institutions in 2 countries.

Wei ZhongSchool of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China. zwnice@163.com.ORCID 0000-0002-0317-7253
Sunbin DengState Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China. sdengaa@connect.ust.hk.ORCID 0000-0002-3428-3120
Kai WangState Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China. kaiwjnu@163.com.
Guijun LiState Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China. gliad@connect.ust.hk.
Guoyuan LiSchool of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China. phgyli@scut.edu.cn.
Rongsheng ChenSchool of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China. rschen@connect.ust.hk.
Hoi-Sing KwokState Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China. rschen@connect.ust.hk.
Hong Kong University of Science and Technology · HKSouth China University of Technology · CN

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

In this article, we report continuous and large-area molybdenum disulfide (MoS₂) growth on a SiO₂/Si substrate by radio frequency magnetron sputtering (RFMS) combined with sulfurization. The MoS₂ film was synthesized using a two-step method. In the first step, a thin MoS₂ film was deposited by radio frequency (RF) magnetron sputtering at 400 °C with different sputtering powers. Following, the as-sputtered MoS₂ film was further subjected to the sulfurization process at 600 °C for 60 min. Sputtering combined with sulfurization is a viable route for large-area few-layer MoS₂ by controlling the radio-frequency magnetron sputtering power. A relatively simple growth strategy is demonstrated here that simultaneously enhances thin film quality physically and chemically. Few-layers of MoS₂ are established using Raman spectroscopy, X-ray diffractometer, high-resolution field emission transmission electron microscope, and X-ray photoelectron spectroscopy measurements. Spectroscopic and microscopic results reveal that these MoS₂ layers are of low disorder and well crystallized. Moreover, high quality few-layered MoS₂ on a large-area can be achieved by controlling the radio-frequency magnetron sputtering power.

Indexed as

disorderfew-layer MoS2magnetron sputteringmagnetron sputtering powerraman spectroscopy

Identifiers

PMID30081483
PMCPMC6116247
OpenAlexW2887652310

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.