A memristive plasticity model of voltage-based STDP suitable for recurrent bidirectional neural networks in the hippocampus.

Memristive systems have gained considerable attention in the field of neuromorphic engineering, because they allow the emulation of synaptic functionality in solid state nano-physical systems. In this study, we show that memristive behavior provides a broad working framework for the phenomenological modelling of cellular synaptic mechanisms. In particular, we seek to understand how close a memristive system can account for the biological realism. The basic characteristics of memristive systems, i.e. voltage and memory behavior, are used to derive a voltage-based plasticity rule. We show that this model is suitable to account for a variety of electrophysiology plasticity data. Furthermore, we incorporate the plasticity model into an all-to-all connecting network scheme. Motivated by the auto-associative CA3 network of the hippocampus, we show that the implemented network allows the discrimination and processing of mnemonic pattern information, i.e. the formation of functional bidirectional connections resulting in the formation of local receptive fields. Since the presented plasticity model can be applied to real memristive devices as well, the presented theoretical framework can support both, the design of appropriate memristive devices for neuromorphic computing and the development of complex neuromorphic networks, which account for the specific advantage of memristive devices.