ArticleSensors (Basel, Switzerland)2018
Transilient Response to Acetone Gas Using the Interlocking p+n Field-Effect Transistor Circuit.
Article in Sensors (Basel, Switzerland), 2018. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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3 citing papers in PubMed, 12 citations in OpenAlex.
- Inorganic-Diverse Nanostructured Materials for Volatile Organic Compound Sensing.Sensors (Basel, Switzerland) · 2021Review
- Synthesis, Characterization, and Three-Dimensional Structure Generation of Zinc Oxide-Based Nanomedicine for Biomedical Applications.Pharmaceutics · 2019Review
- Conductometric acetone vapor sensor based on the use of gold-doped three-dimensional hierarchical porous zinc oxide microspheres.Mikrochimica acta · 2019Article
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Authors and funding
7 authors at 3 institutions in 1 country.
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No grant is acknowledged in the PubMed record.
Abstract
Low concentration acetone gas detection is significantly important for diabetes diagnosis as 1.8⁻10 ppm of acetone exists in exhaled breath from diabetes patients. A new interlocking p+n field-effect transistor (FET) circuit has been proposed for Mn-doped ZnO nanoparticles (MZO) to detect the acetone gas at low concentration, especially close to 1.8 ppm. It is noteworthy that MZO in this interlocking amplification circuit shows a low voltage signal of <0.3 V to the acetone <2 ppm while it displays a transilient response with voltage signal >4.0 V to >2 ppm acetone. In other words, the response to acetone from 1 ppm to 2 ppm increases by ~1233%, which is competent to separate diabetic patients from healthy people. Moreover, the response to 2 ppm acetone is hardly influenced by high relative humidity of 85%. In the meanwhile, MZO in this interlocking circuit possesses a high acetone selectivity compared to formaldehyde, acetaldehyde, toluene and ethanol, suggesting a promising technology for the widespread qualitative screening of diabetes. Importantly, this interlocking circuit is also applicable to other types of metal oxide semiconductor gas sensors. The resistance jump of p- and n-FETs induced by the change of their gate voltages is deemed to make this interlocking circuit produce the transilient response.
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