Evidence map›Paper›PMID 29740776›Full record

ArticleNanoscale research letters2018

Low-Temperature Reduction of Graphene Oxide: Electrical Conductance and Scanning Kelvin Probe Force Microscopy.

Oleksandr M Slobodian, Peter M Lytvyn, Andrii S Nikolenko, Victor M Naseka, Oleg Yu Khyzhun, Andrey V Vasin, Stanislav V Sevostianov, Alexei N Nazarov

Abstract read
In one paragraph

Article in Nanoscale research letters, 2018. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 8 papers.

0numbers the graph read from it
0cells of the map it votes in
8citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

8 citing papers in PubMed.

  1. Article
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  8. Influence of SiORSC advances · 2019
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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

8 authors.

Oleksandr M SlobodianNational Technical University of Ukraine "Igor Sikorsky KPI", 37, Prosp.Peremohy, Kyiv, 03056, Ukraine. a.slobodyan-2015@kpi.ua.ORCID http://orcid.org/0000-0002-6770-3144
Peter M LytvynV. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41 Prosp. Nauki, Kyiv, 03028, Ukraine.
Andrii S NikolenkoV. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41 Prosp. Nauki, Kyiv, 03028, Ukraine.
Victor M NasekaV. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41 Prosp. Nauki, Kyiv, 03028, Ukraine.
Oleg Yu KhyzhunFrantsevych Institute for Problems of Materials Science NAS of Ukraine, 3 Krzhizhanovsky St., Kyiv, 03680, Ukraine.
Andrey V VasinNational Technical University of Ukraine "Igor Sikorsky KPI", 37, Prosp.Peremohy, Kyiv, 03056, Ukraine.
Stanislav V SevostianovChuiko Institute of Surface Chemistry NAS of Ukraine, 17 Generala Naumova St, Kyiv, 03164, Ukraine.
Alexei N NazarovNational Technical University of Ukraine "Igor Sikorsky KPI", 37, Prosp.Peremohy, Kyiv, 03056, Ukraine.

Funding

Ministry of Education and Science of Ukraine Project F2904
6 · The paper itself

Abstract

Graphene oxide (GO) films were formed by drop-casting method and were studied by FTIR spectroscopy, micro-Raman spectroscopy (mRS), X-ray photoelectron spectroscopy (XPS), four-points probe method, atomic force microscopy (AFM), and scanning Kelvin probe force (SKPFM) microscopy after low-temperature annealing at ambient conditions. It was shown that in temperature range from 50 to 250 °C the electrical resistivity of the GO films decreases by seven orders of magnitude and is governed by two processes with activation energies of 6.22 and 1.65 eV, respectively. It was shown that the first process is mainly associated with water and OH groups desorption reducing the thickness of the film by 35% and causing the resistivity decrease by five orders of magnitude. The corresponding activation energy is the effective value determined by desorption and electrical connection of GO flakes from different layers. The second process is mainly associated with desorption of oxygen epoxy and alkoxy groups connected with carbon located in the basal plane of GO. AFM and SKPFM methods showed that during the second process, first, the surface of GO plane is destroyed forming nanostructured surface with low work function and then at higher temperature a flat carbon plane is formed that results in an increase of the work function of reduced GO.

Indexed as

Atomic force microscopyElectrical resistivityFTIR spectroscopyGraphene oxideRaman spectroscopyReduced graphene oxideScanning Kelvin probe force microscopy

Identifiers

PMID29740776
PMCPMC5940978

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