ArticleScientific reports2018
Broadband luminescence in defect-engineered electrochemically produced porous Si/ZnO nanostructures.
Article in Scientific reports, 2018. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 5 papers.
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Who cites it
5 citing papers in PubMed.
- Top-Down Synthesis of Wurtzite Gallium Nitride Colloidal Quantum Dots via Defect-Driven Fragmentation.Small methods · 2026Article
- Controlling barrier height and spectral responsivity of p-i-n based GeSn photodetectorsRSC advances · 2023Article
- Muon Irradiation of ZnO Rods: Superparamagnetic Nature Induced by Defects.Nanomaterials (Basel, Switzerland) · 2022Article
- Electrochemical and photoluminescence response of laser-induced graphene/electrodeposited ZnO composites.Scientific reports · 2021Article
- Porous Silicon-Zinc Oxide Nanocomposites Prepared by Atomic Layer Deposition for Biophotonic Applications.Materials (Basel, Switzerland) · 2020Article
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Authors and funding
10 authors.
Funding
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Abstract
The fabrication, by an all electrochemical process, of porous Si/ZnO nanostructures with engineered structural defects, leading to strong and broadband deep level emission from ZnO, is presented. Such nanostructures are fabricated by a combination of metal-assisted chemical etching of Si and direct current electrodeposition of ZnO. It makes the whole fabrication process low-cost, compatible with Complementary Metal-Oxide Semiconductor technology, scalable and easily industrialised. The photoluminescence spectra of the porous Si/ZnO nanostructures reveal a correlation between the lineshape, as well as the strength of the emission, with the morphology of the underlying porous Si, that control the induced defects in the ZnO. Appropriate fabrication conditions of the porous Si lead to exceptionally bright Gaussian-type emission that covers almost the entire visible spectrum, indicating that porous Si/ZnO nanostructures could be a cornerstone material towards white-light-emitting devices.
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Registered trials
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