ArticleSensors (Basel, Switzerland)2018
A 0.18 μm CMOS LDO Regulator for an On-Chip Sensor Array Impedance Measurement System.
Article in Sensors (Basel, Switzerland), 2018. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 3 papers.
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Who cites it
3 citing papers in PubMed.
- High-Precision Low-Temperature Drift LDO Regulator Tailored for Time-Domain Temperature Sensors.Sensors (Basel, Switzerland) · 2022Article
- Categorization and Characterization of Time Domain CMOS Temperature Sensors.Sensors (Basel, Switzerland) · 2020Review
- A CMOS Low Pass Filter for SoC Lock-in-Based Measurement Devices.Sensors (Basel, Switzerland) · 2019Article
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Authors and funding
4 authors.
Funding
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Abstract
This paper presents a fully integrated 0.18 μm CMOS Low-Dropout (LDO) Voltage Regulator specifically designed to meet the stringent requirements of a battery-operated impedance spectrometry multichannel CMOS micro-instrument. The proposed LDO provides a regulated 1.8 V voltage from a 3.6 V to 1.94 V battery voltage over a −40 °C to 100 °C temperature range, with a compact topology (<0.10 mm² area) and a constant quiescent current of only 7.45 μA with 99.985% current efficiency, achieving remarkable state-of-art Figures of Merit (FoMs) for the regulating⁻transient performance. Experimental measurements validate its suitability for the target application, paving the way towards the future achievement of a truly portable System on Chip (SoC) platform for impedance sensors.
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