ArticleNature communications2018
Nanomanufacturing of silicon surface with a single atomic layer precision via mechanochemical reactions.
Article in Nature communications, 2018. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 21 papers.
What it found
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Who cites it
21 citing papers in PubMed.
- Nanoscale frictional imaging of ferroelectric domains.Science advances · 2026Article
- Quantitative Wear Models for Microscale Material Removal.Nanomaterials (Basel, Switzerland) · 2026Review
- Molecular Dynamics Simulation of Texture Contact Friction Between Crystalline Silicon Layers for Application in Micro-Nano System Devices.Molecules (Basel, Switzerland) · 2025Article
- Chemical Mechanical Polishing of ZerodurNanomaterials (Basel, Switzerland) · 2025Article
- A Comprehensive Review of the Nano-Abrasives Key Parameters Influencing the Performance in Chemical Mechanical Polishing.Nanomaterials (Basel, Switzerland) · 2025Review
- Mechanochemistry: Fundamental Principles and Applications.Advanced science (Weinheim, Baden-Wurttemberg, Germany) · 2025Review
- High pressure-derived nonsymmetrical [CuScience advances · 2024Article
- Interaction mechanism of AlRSC advances · 2024Article
- A contact-electro-catalysis process for producing reactive oxygen species by ball milling of triboelectric materials.Nature communications · 2024Article
- Polishing Approaches at Atomic and Close-to-Atomic Scale.Micromachines · 2023Review
- Nonlinear Effects of Pulsed Ion Beam in Ultra-High Resolution Material Removal.Micromachines · 2022Article
- Understanding the Mechanisms of SiC-Water Reaction during Nanoscale Scratching without Chemical Reagents.Micromachines · 2022Article
- Structure Fabrication on Silicon at Atomic and Close-To-Atomic Scale Using Atomic Force Microscopy: Implications for Nanopatterning and Nanodevice Fabrication.Micromachines · 2022Article
- Role of Interfacial Bonding in Tribochemical Wear.Frontiers in chemistry · 2022Review
- Low-Energy Pulsed Ion Beam Technology with Ultra-High Material Removal Resolution and Widely Adjustable Removal Efficiency.Micromachines · 2021Article
- Local Interactions of Atmospheric Oxygen with MoSMaterials (Basel, Switzerland) · 2021Review
- Study on Mechanisms of Photon-Induced Material Removal on Silicon at Atomic and Close-to-Atomic Scale.Nanomanufacturing and metrology · 2021Article
- Mechanical Nano-Patterning: Toward Highly-Aligned Ge Self-Assembly on Low Lattice Mismatched GaAs Substrate.Scientific reports · 2019Article
- Friction-induced selective etching on silicon by TMAH solution.RSC advances · 2018Article
- Article
Corrections and comments
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Authors and funding
9 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Topographic nanomanufacturing with a depth precision down to atomic dimension is of importance for advancement of nanoelectronics with new functionalities. Here we demonstrate a mask-less and chemical-free nanolithography process for regio-specific removal of atomic layers on a single crystalline silicon surface via shear-induced mechanochemical reactions. Since chemical reactions involve only the topmost atomic layer exposed at the interface, the removal of a single atomic layer is possible and the crystalline lattice beneath the processed area remains intact without subsurface structural damages. Molecular dynamics simulations depict the atom-by-atom removal process, where the first atomic layer is removed preferentially through the formation and dissociation of interfacial bridge bonds. Based on the parametric thresholds needed for single atomic layer removal, the critical energy barrier for water-assisted mechanochemical dissociation of Si-Si bonds was determined. The mechanochemical nanolithography method demonstrated here could be extended to nanofabrication of other crystalline materials.
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Registered trials
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