Evidence map›Paper›PMID 28931815›Full record

ArticleNature communications2017

Silicon single-photon avalanche diodes with nano-structured light trapping.

Kai Zang, Xiao Jiang, Yijie Huo, Xun Ding, Matthew Morea, Xiaochi Chen, Ching-Ying Lu, Jian Ma, Ming Zhou, Zhenyang Xia and 4 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2017. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 19 papers.

0numbers the graph read from it
0cells of the map it votes in
19citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

19 citing papers in PubMed.

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4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

14 authors.

Kai ZangDepartment of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA. kaizang@stanford.edu.ORCID http://orcid.org/0000-0003-1488-3177
Xiao JiangHefei National Laboratory for Physical Sciences at the Microscale and Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
Yijie HuoDepartment of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA.
Xun DingHefei National Laboratory for Physical Sciences at the Microscale and Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
Matthew MoreaDepartment of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA.ORCID http://orcid.org/0000-0001-6230-3072
Xiaochi ChenDepartment of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA.
Ching-Ying LuDepartment of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA.
Jian MaHefei National Laboratory for Physical Sciences at the Microscale and Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
Ming ZhouDepartment of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA.
Zhenyang XiaDepartment of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA.
Zongfu YuDepartment of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA.
Theodore I KaminsDepartment of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA.ORCID http://orcid.org/0000-0001-8319-1161
Qiang ZhangHefei National Laboratory for Physical Sciences at the Microscale and Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
James S HarrisDepartment of Electrical Engineering, Stanford University, Stanford, CA, 94305, USA.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Silicon single-photon avalanche detectors are becoming increasingly significant in research and in practical applications due to their high signal-to-noise ratio, complementary metal oxide semiconductor compatibility, room temperature operation, and cost-effectiveness. However, there is a trade-off in current silicon single-photon avalanche detectors, especially in the near infrared regime. Thick-junction devices have decent photon detection efficiency but poor timing jitter, while thin-junction devices have good timing jitter but poor efficiency. Here, we demonstrate a light-trapping, thin-junction Si single-photon avalanche diode that breaks this trade-off, by diffracting the incident photons into the horizontal waveguide mode, thus significantly increasing the absorption length. The photon detection efficiency has a 2.5-fold improvement in the near infrared regime, while the timing jitter remains 25 ps. The result provides a practical and complementary metal oxide semiconductor compatible method to improve the performance of single-photon avalanche detectors, image sensor arrays, and silicon photomultipliers over a broad spectral range.The performance of silicon single-photon avalanche detectors is currently limited by the trade-off between photon detection efficiency and timing jitter. Here, the authors demonstrate how a CMOS-compatible, nanostructured, thin junction structure can make use of tailored light trapping to break this trade-off.

Identifiers

PMID28931815
PMCPMC5607005

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.