Evidence map›Paper›PMID 28892051›Full record

ArticleNature materials2017

A map of high-mobility molecular semiconductors.

S Fratini, S Ciuchi, D Mayou, G Trambly de Laissardière, A Troisi

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Article in Nature materials, 2017. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 59 papers.

0numbers the graph read from it
0cells of the map it votes in
59citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

59 citing papers in PubMed.

  1. Article
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  8. Hall mobility exceeding 100 cmScience advances · 2025
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  9. Article
  10. Review
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  15. On the importance of crystal structures for organic thin film transistors.Acta crystallographica. Section C, Structural chemistry · 2024
    Article
  16. Article
  17. Article
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  20. Structure-Property Relationships for the Electronic Applications of Bis-Adduct Isomers of Phenyl-CChemistry of materials : a publication of the American Chemical Society · 2024
    Article
4 · The record

Corrections and comments

5 · Who and what money

Authors and funding

5 authors.

S FratiniUniv. Grenoble Alpes, Inst NEEL, F-38042 Grenoble, France.ORCID 0000-0002-4750-3241
S CiuchiDepartment of Physical and Chemical Sciences University of L'Aquila, Via Vetoio, I-67100 L'Aquila, Italy.ORCID 0000-0003-1251-1484
D MayouUniv. Grenoble Alpes, Inst NEEL, F-38042 Grenoble, France.
G Trambly de LaissardièreLaboratoire de Physique Théorique et Modélisation, CNRS, Université de Cergy-Pontoise, F-95302 Cergy-Pontoise, France.
A TroisiDepartment of Chemistry, University of Liverpool, Liverpool L69 7ZD, UK.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

The charge mobility of molecular semiconductors is limited by the large fluctuation of intermolecular transfer integrals, often referred to as off-diagonal dynamic disorder, which causes transient localization of the carriers' eigenstates. Using a recently developed theoretical framework, we show here that the electronic structure of the molecular crystals determines its sensitivity to intermolecular fluctuations. We build a map of the transient localization lengths of high-mobility molecular semiconductors to identify what patterns of nearest-neighbour transfer integrals in the two-dimensional (2D) high-mobility plane protect the semiconductor from the effect of dynamic disorder and yield larger mobility. Such a map helps rationalizing the transport properties of the whole family of molecular semiconductors and is also used to demonstrate why common textbook approaches fail in describing this important class of materials. These results can be used to rapidly screen many compounds and design new ones with optimal transport characteristics.

Identifiers

PMID28892051

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.