ArticleScientific reports2017
Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor.
Article in Scientific reports, 2017. The graph could read no effect estimate from its abstract, so it casts no vote on the map. An erratum has been issued. Cited by 6 papers.
What it found
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
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Who cites it
6 citing papers in PubMed.
- A read voltage dependent synaptic characteristics of sub-threshold thin film transistors with a hf doped ZnO active layer.Scientific reports · 2025Article
- Nanowire-Enhanced Fully Transparent and Flexible Indium Gallium Zinc Oxide Transistors with Chitosan Hydrogel Gate Dielectric: A Pathway to Improved Synaptic Properties.Gels (Basel, Switzerland) · 2023Article
- Implementation of PPI with Nano Amorphous Oxide Semiconductor Devices for Medical Applications.International journal of nanomedicine · 2020Article
- Short Communication: An Updated Design to Implement Artificial Neuron Synaptic Behaviors in One Device with a Control Gate.International journal of nanomedicine · 2020Article
- Flexible and Transparent Artificial Synapse Devices Based on Thin-Film Transistors with Nanometer Thickness.International journal of nanomedicine · 2020Article
- Change Of Nano Material Electrical Characteristics For Medical System Applications.International journal of nanomedicine · 2019Article
Corrections and comments
- Erratum issued
Authors and funding
6 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Recently, advanced designs and materials emerge to study biologically inspired neuromorphic circuit, such as oxide semiconductor devices. The existence of mobile ions in the oxide semiconductors could be somewhat regarded to be similar with the case of the ions movements among the neurons and synapses in the brain. Most of the previous studies focus on the spike time, pulse number and material species: however, a quantitative modeling is still needed to study the voltage dependence of the relaxation process of synaptic devices. Here, the gate pulse stimulated currents of oxide semiconductor devices have been employed to mimic and investigate artificial synapses functions. The modeling for relaxation process of important synaptic behaviors, excitatory post-synaptic current (EPSC), has been updated as a stretched-exponential function with voltage factors in a more quantitative way. This quantitative modeling investigation of representative synaptic transmission bias impacts would help to better simulate, realize and thus control neuromorphic computing.
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Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.