ArticleMaterials (Basel, Switzerland)2017
Optical Absorption Enhancement in CdTe Thin Films by Microstructuration of the Silicon Substrate.
Article in Materials (Basel, Switzerland), 2017. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 6 papers.
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Who cites it
6 citing papers in PubMed, 61 citations in OpenAlex.
- Solar energy resource availability under extreme and historical wildfire smoke conditions.Nature communications · 2025Article
- Article
- Guided CdTe Nanowires Integrated into Fast Near-Infrared Photodetectors.ACS applied materials & interfaces · 2024Article
- Synthesis and Characterization of High-Efficiency Halide Perovskite Nanomaterials for Light-Absorbing Applications.Industrial & engineering chemistry research · 2023Article
- Generation of mode-locked pulses based on D-shaped fiber with CdTe as a saturable absorber in the C-band region.RSC advances · 2022Article
- Perovskites-Based Solar Cells: A Review of Recent Progress, Materials and Processing Methods.Materials (Basel, Switzerland) · 2018Review
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Authors and funding
2 authors at 1 institution in 1 country.
Funding
No grant is acknowledged in the PubMed record.
Abstract
In this work, the reflectance, optical absorption, and band gap have been determined for CdTe thin films grown on planar and microstructured substrates. The treated surface was prepared by laser ablation of a silicon wafer, forming holes in a periodic arrangement. Thin films were grown by pulsed laser ablation on silicon samples kept at 200 °C inside a vacuum chamber. The presence of CdTe was verified with X-ray diffraction and Raman spectroscopy indicating a nanocrystalline zinc blended structure. The optical absorption of thin films was calculated by using the Fresnel laws and the experimental reflectance spectrum. Results show that reflectance of 245 nm films deposited on modified substrates is reduced by up to a factor of two than the obtained on unchanged silicon and the optical absorption is 16% higher at ~456 nm. Additionally, it was determined that the band gap energy for planar and microstructured films is about 1.44 eV for both cases.
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Registered trials
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